GSA1015 Datasheet, PDF (1/2 Pages) GTM CORPORATION – PNP EPITAXIAL PLANAR TRANSISTOR

CORPORATION ISSUED DATE :2004/07/09
REVISED DATE :2004/11/29B
GSA1015
PNP EPITAXIAL PLANAR TANSISTOR
Description
The GSA1015 is designed for use in driver stage of AF amplifier and general purpose applications.
Features
*Collector-Base Voltage: VCBO =-50V
*Complementary to GSC1815
Package Dimensions
D
E
S1
TO-92
b1
S E A T IN G
PLANE
C
e1
b
e
Absolute Maximum Ratings at Ta = 25к
Parameter
Junction Temperature
Storage Temperature
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Base Current
Total Power Dissipation
Characteristics at
Symbol
Tj
Tstg
VCBO
VCEO
VEBO
IC
IB
PD
Ta = 25к
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
*VCE(sat)
*VBE(sat)
hFE1
hFE2
fT
Cob
Min.
Typ.
Max.
-50
-
-
-50
-
-
-5
-
-
-
-
-100
-
-
-100
-
-
-0.3
-
-
-1.1
70
-
700
25
-
-
80
-
-
-
-
7.0
Unit
V
V
V
nA
nA
V
V
MHz
pF
Classification OF hFE1
Rank
Range
O
70-140
Y
120-240
GR
200-400
REF.
A
S1
b
b1
C
Millimeter
Min. Max.
4.45 4.7
1.02
-
0.36 0.51
0.36 0.76
0.36 0.51
REF.
D
E
L
e1
e
Millimeter
Min. Max.
4.44 4.7
3.30 3.81
12.70 -
1.150 1.390
2.42 2.66
Ratings
Unit
+150
ć
-55 ~ +150
ć
-50
V
-50
V
-5
V
-150
mA
-50
mA
400
mW
Test Conditions
IC=-100uA , IE = 0
IC=-1mA, IB = 0
IE=-10uA, IC = 0
VCE=-50V, IE = 0
VEB=-5V, IC = 0
IC=-100mA, IB=-10mA
IC=-100mA, IB=-10mA
VCE=-6V, IC=-2mA
VCE=-6V, IC=-150mA
VCE=-10V, IC=-1mA, f=100MHz
VCB=-10V, IE = 0,f=1MHz
* Pulse Test: Pulse WidthЉ380us, Duty CycleЉ2%
L
350-700
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