GS3018 Datasheet, PDF (1/4 Pages) GTM CORPORATION – N-CHANNEL MOSFET

GS3018
N-CHANNEL MOSFET
Description
N-channel enhancement-mode MOSFET
Features
Ô¦Low on-resistance.
Ô¦Fast switching speed.
Ô¦Low voltage drive (2.5V) makes this device ideal for portable equipment.
Ô¦Easily designed drive circuits.
Ô¦Easy to parallel.
Package Dimensions
Pb Free Plating Product
ISSUED DATE :2004/11/24
REVISED DATE :2005/12/02C
BVDSS
RDS(ON)
ID
30V
8
115mA
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current³
Continuous Drain Current³
Pulsed Drain Current^1,2
Power Dissipation
Linear Derating Factor
Operating Junction and Storage Temperature Range
Symbol
V_DS
V_GS
I_D @TA=25к
I_D @TA=100к
I_DM
P_D @TA=25к
Tj, Tstg
Thermal Data
Parameter
Thermal Resistance Junction-ambient³ Max.
Symbol
Rthj-a
REF.
A
A1
A2
D
E
HE
Millimeter
Min. Max.
0.8
1.10
0
0.10
0.8
1.00
1.80
2.20
1.15
1.35
1.80
2.40
REF.
L1
L
b
c
e
Q1
Millimeter
Min. Max.
0.42 REF.
0.15
0.35
0.25
0.40
0.10
0.25
0.65 REF.
0.15 BSC.
Ratings
30
f20
115
75
800
0.225
0.0018
-40 ~ +150
Unit
V
V
mA
mA
mA
W
W/ć
ć
Ratings
556
Unit
ć/W
GS3018
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