GS123 Datasheet, PDF (1/2 Pages) GTM CORPORATION – NPN EPITAXIAL TRANSISTOR

GS123
NPN EPITAXIAL TRANSISTOR
Description
The GS123 is designed for general purpose amplifier applications.
Package Dimensions
ISSUED DATE :2005/02/25
REVISED DATE :
Absolute Maximum Ratings at Ta = 25к
Parameter
Symbol
Junction Temperature
Tj
Storage Temperature
Tstg
Collector to Base Voltage
VCBO
Collector to Emitter Voltage
VCEO
Emitter to Base Voltage
VEBO
Collector Current
IC
Total Power Dissipation
PD
REF.
A
A1
A2
D
E
HE
Millimeter
Min. Max.
0.80 1.10
0
0.10
0.80 1.00
1.80 2.20
1.15 1.35
1.80 2.40
REF.
L1
L
b
c
e
Q1
Millimeter
Min. Max.
0.42 REF.
0.15
0.35
0.25
0.40
0.10
0.25
0.65 REF.
0.15 BSC.
Ratings
Unit
+150
ć
-55 ~ +150
ć
25
V
20
V
5
V
700
mA
225
mW
Characteristics at
Symbol
BVCBO
BVCEO
Min.
25
20
BVEBO
5
ICBO
-
VCE(sat)
-
VBE(on)
-
hFE
150
fT
150
Cob
-
Ta = 25к
Typ.
-
-
-
-
-
-
-
-
-
Max.
-
-
-
1
400
1
300
-
10
Unit
V
V
V
uA
mV
V
MHz
pF
Test Conditions
IC=10uA , IE=0
IC=1mA, IB=0
IE=10uA, IC=0
VCB=20V, IE=0
IC=500mA, IB=50mA
VCE=1V, IC=150mA
VCE=1V, IC=150mA
VCE=10V, IC=20mA, f=100MHz
VCB=10V, f=1MHz
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