GPN2222A Datasheet, PDF (1/3 Pages) GTM CORPORATION – NPN EPITAXIAL PLANAR TRANSISTOR

ISSUED DATE :2004/07/09
REVISED DATE :2004/11/29B
GPN2222A _{NPN EPITAXIAL PLANAR TANSISTOR}
Description
The GPN2222A is designed for general purpose amplifier and high speed, medium-power switching applications.
Features
*Low Collector Saturation Voltage
*High Speed Switching
*For Complementary Use with PNP Type GPN2907A
Package Dimensions
D
E
S1
TO-92
b1
S E A T IN G
PLANE
C
e1
b
e
Absolute Maximum Ratings at Ta = 25к
Parameter
Symbol
Junction Temperature
Tj
Storage Temperature
Tstg
Collector to Base Voltage
VCBO
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
VCEO
VEBO
IC
Total Power Dissipation
PD
Characteristics at Ta = 25к
Symbol
BVCBO
BVCEO
BVEBO
ICBO
ICEX
IEBO
*VCE(sat)1
*VCE(sat)2
*VBE(sat)1
* VBE(sat)2
*hFE1
*hFE2
*hFE3
*hFE4
*hFE5
*hFE6
fT
Cob
Min.
75
40
6
-
-
-
-
-
-
-
35
50
75
100
40
50
300
-
Typ.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Max.
-
-
-
10
10
50
0.3
1.0
1.2
2
-
-
-
300
-
-
-
8
Unit
V
V
V
nA
nA
nA
V
V
V
V
MHz
pF
REF.
A
S1
b
b1
C
Millimeter
Min. Max.
4.45 4.7
1.02
-
0.36 0.51
0.36 0.76
0.36 0.51
REF.
D
E
L
e1
e
Millimeter
Min. Max.
4.44 4.7
3.30 3.81
12.70 -
1.150 1.390
2.42 2.66
Ratings
Unit
+150
ć
-55 ~ +150
ć
75
V
40
V
6
V
600
mA
625
mW
Test Conditions
IC=10uA ,IE=0
IC=10mA ,IB=0
IE=10uA ,IC=0
VCE=60V, IE = 0
VCE=60V,VBE(OFF)=3V
VEB=3V, Ic = 0
IC=150mA, IB=15mA
IC=500mA, IB=50mA
IC=150mA, IB=15mA
IC=500mA, IB=50mA
VCE=10V, IC=100uA
VCE=10V, IC=1mA
VCE=10V,IC=10mA
VCE=10V,IC=150mA
VCE=10V,IC=500mA
VCE=1V,IC=150mA
VCE=20V, IC=20mA, f=100MHz
VCB=10V, IE = 0,f=1MHz
* Pulse Test: Pulse WidthЉ380us, Duty CycleЉ2%
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