GP4953 Datasheet, PDF (1/4 Pages) GTM CORPORATION – P-CHANNEL ENHANCEMENT MODE POWER MOSFET

Pb Free Plating Product
ISSUED DATE :2005/08/08
REVISED DATE :
GP4953
P-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS
RDS(ON)
ID
-30V
53m
-5A
Description
The GP4953 provide the designer with the best combination of fast switching, ruggedized device design, low
on-resistance and cost-effectiveness.
Features
*Low On-Resistance
*Simple Drive Requirement
*Fast Switching
Package Dimensions
D
GAUGE PLANE
SEATING PLANE
ZZ
be
b
SECTION Z - Z
DIP-8
REF.
A
A1
A2
b
b1
b2
b3
c
Millimeter
Min.
Max.
-
0.5334
0.381
-
2.921
4.953
0.356
0.559
0.356
0.508
1.143
1.778
0.762
1.143
0.203
0.356
REF.
c1
D
E
E1
e
HE
L
Millimeter
Min.
Max.
0.203
0.279
9.017
10.16
6.096
7.112
7.620
8.255
2.540 BSC
-
10.92
2.921
3.810
Absolute Maximum Ratings
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
Continuous Drain Current³
Continuous Drain Current³
Pulsed Drain Current¹
V_GS
I_D @TA=25к
I_D @TA=70к
I_DM
Total Power Dissipation
P_D @TA=25к
Linear Derating Factor
Operating Junction and Storage Temperature Range Tj, Tstg
Ratings
-30
f20
-5
-4
-20
2
0.016
-55 ~ +150
Unit
V
V
A
A
A
W
W/ć
ć
Thermal Data
Parameter
Thermal Resistance Junction-ambient³
Max.
Symbol
Rthj-amb
Value
62.5
Unit
ć/W
GP4953
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