GMSD1664 Datasheet, PDF (1/2 Pages) GTM CORPORATION – NPN EPITAXIAL PLANAR TRANSISTOR

CORPORATION ISSUED DATE :2005/03/04
REVISED DATE :
GMSD1664
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The GMSD1664 is designed for general purpose amplifier applications.
Package Dimensions
SOT-89
Absolute Maximum Ratings at Ta = 25к
Parameter
Symbol
Junction Temperature
Tj
Storage Temperature
Tstg
Collector to Base Voltage
VCBO
Collector to Emitter Voltage
VCEO
Emitter to Base Voltage
Collector Current at Ta=25к
Total Power Dissipation at Ta=25к
VEBO
IC
PD
Characteristics at Ta = 25к
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
VCE(sat)
hFE
fT
Cob
Min.
40
32
5
-
-
-
82
-
-
Typ.
-
-
-
-
-
0.15
-
150
9
Max.
-
-
-
500
500
0.4
390
-
-
Classification Of hFE
Rank
P
hFE
82-180
Q
120-270
REF.
A
B
C
D
E
F
Millimeter
Min.
Max.
4.4
4.6
4.05
4.25
1.50
1.70
1.30
1.50
2.40
2.60
0.89
1.20
REF.
G
H
I
J
K
L
M
Millimeter
Min. Max.
3.00 REF.
1.50 REF.
0.40 0.52
1.40 1.60
0.35 0.41
5q TYP.
0.70 REF.
Ratings
Unit
+150
ć
-55 ~ +150
ć
40
V
32
V
5
V
1
A
500
mW
Unit
V
V
V
nA
nA
V
MHz
pF
Test Conditions
IC=50uA
IC=1mA
IE=50uA
VCE=20V
VEB=4V
IC=500mA, IB=50mA
VCE=3V, IC=100mA
VCE=5V, IE=-50mA, f=100MHz
VCB=10V, IE=0mA, f=1MHz
R
180-390
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