GMPSA94 Datasheet, PDF (1/2 Pages) GTM CORPORATION – PNP EPITAXIAL PLANAR TRANSISTOR

ISSUED DATE :2003/11/27
REVISED DATE :2005/05/04C
GMPSA94
PNP EPITAXIAL PLANAR TRANSISTOR
Description
The GMPSA94 is designed for application that requires high voltage.
Features
*High Breakdown Voltage:-400(Min) at IC=-1mA
*High current .Gain :IC=-300mA at 25к
*Complementary to GMPSA44
Package Dimensions
D
E
S1
TO-92
b1
S E A T IN G
PLANE
e1
b
C
e
REF.
A
S1
b
b1
C
Millimeter
Min. Max.
4.45 4.7
1.02
-
0.36 0.51
0.36 0.76
0.36 0.51
REF.
D
E
L
e1
e
Millimeter
Min. Max.
4.44 4.7
3.30 3.81
12.70 -
1.150 1.390
2.42 2.66
Absolute Maximum Ratings (Ta = 25к,unless otherwise specified)
Parameter
Ratings
Unit
Collector to Base Voltage
VCBO
-400
V
Collector to Emitter Voltage
VCEO
-400
V
Emitter to Base Voltage
VEBO
-6
V
Collect Current(DC)
IC
-300
mA
Junction Temperature
Tj
+150
ć
Storage Temperature Range
TsTG
-55 ~ +150
ć
Total Power Dissipation
PD
625
mW
Electrical Characteristics(Ta = 25к,unless otherwise specified)
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
BVCBO
BVCEO
BVEBO
ICBO
IEBO
ICES
VCE(sat)1
VCE(sat)2
-400
-
-
V
IC=-100uA,IE=0
-400
-
-
V
IC=-1mA ,IB=0
-6
-
-
V
IE=-10uA ,IC=0
-
-
-100
nA
VCB=-400V,IE=0
-
-
-100
nA
VEB=-4V,IC=0
-
-
-500
nA
VCE=-400V,VBE=0
-
-
-350
mV
IC=-1.0mA, IB= -0.1mA
-
-
-500
mV
IC=-10mA, IB=-1mA
VCE(sat)3
VBE(sat)
hFE1
hFE2
hFE3
hFE4
-
-
-750
mV
IC=-50mA, IB=-5mA
-
-
-750
mV
IC=-10mA, IB=-1mA
40
-
-
VCE=-10V, IC=-1mA
50
-
300
VCE=-10V, IC=-10mA
45
-
-
VCE=-10V, IC=-50mA
40
-
-
VCE=-10V, IC=-100mA
Classification of hFE2
Rank
Range
VCE(sat)2:IC=-10mA, IB=-1mA
hFE: VCE=3V,IC=100mA
N
50-300
-
-
NS
70-300
-
>50
SD
70-210
<200mV
-
SUM
120-300
-
-
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