GMPSA44S Datasheet, PDF (1/2 Pages) GTM CORPORATION – NPN EPITAXIAL PLANAR TRANSISTOR

ISSUED DATE :2006/10/13
REVISED DATE :
GMPSA44S
NPN EPITAXIAL PLANAR T RANSISTOR
Description
The GMPSA44S is designed for application that requires high voltage.
Features
*High Breakdown Voltage: 400(Min) at IC=1mA
*High current Gain: IC=300mA at 25к
*Complementary to GMPSA94S
Package Dimensions
D
TO-92
E
S1
b1
S E A T IN G
PLANE
C
e1
b
e
REF.
A
S1
b
b1
C
Millimeter
Min. Max.
4.45
4.7
1.02
-
0.36
0.51
0.36
0.76
0.36
0.51
REF.
D
E
L
e1
e
Millimeter
Min.
Max.
4.44
4.7
3.30
3.81
12.70
-
1.150 1.390
2.42
2.66
Absolute Maximum Ratings (Ta = 25к,unless otherwise specified)
Parameter
Symbol
Ratings
Collector to Base Voltage
VCBO
500
Collector to Emitter Voltage
VCEO
400
Emitter to Base Voltage
VEBO
6
Collect Current(DC)
IC
300
Junction Temperature
Tj
+150
Storage Temperature Range
TsTG
-55 ~ +150
Total Power Dissipation
PD
625
Electrical Characteristics (Ta = 25к, unless otherwise specified)
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
BVCBO
500
-
-
V
IC=100uA, IE=0
BVCEO
400
-
-
V
IC=1mA, IB=0
BVEBO
6
-
-
V
IE=10uA, IC=0
ICBO
-
-
100
nA
VCB=400V, IE=0
IEBO
-
-
100
nA
VEB=4V, IC=0
ICES
-
-
500
nA
VCE=400V, VBE=0
VCE(sat)1
-
-
350
mV IC=1mA, IB=0.1mA
VCE(sat)2
-
-
350
mV IC=20mA, IB=2mA
VCE(sat)3
-
-
750
mV IC=50mA, IB=5mA
VBE(sat)
-
-
750
mV IC=10mA, IB=1mA
hFE1
40
-
-
VCE=10V, IC=1mA
hFE2
50
-
300
VCE=10V, IC=10mA
hFE3
45
-
-
VCE=10V, IC=50mA
hFE4
20
-
-
VCE=10V, IC=100mA
Cob
-
4
6
pF
VCB=20V, f=1MHz, IE=0
Unit
V
V
V
mA
ć
ć
mW
Classification of hFE2
Rank
N
Range
50-300
SD
70-210
SUM
120-300
GMPSA44S
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