GMPSA44 Datasheet, PDF (1/2 Pages) GTM CORPORATION – NPN EPITAXIAL PLANAR TRANSISTOR

ISSUED DATE :2003/11/27
REVISED DATE :2004/11/29B
GMPSA44
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The GMPSA44 is designed for application that requires high voltage.
Features
*High Breakdown Voltage: 400(Min) at IC=1mA
*High current .Gain :IC=300mA at 25к
*Complementary to GMPSA94
Package Dimensions
D
E
S1
TO-92
b1
S E A T IN G
PLANE
C
e1
b
e
REF.
A
S1
b
b1
C
Millimeter
Min. Max.
4.45 4.7
1.02
-
0.36 0.51
0.36 0.76
0.36 0.51
REF.
D
E
L
e1
e
Millimeter
Min. Max.
4.44 4.7
3.30 3.81
12.70 -
1.150 1.390
2.42 2.66
Absolute Maximum Ratings (Ta = 25к,unless otherwise specified)
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collect Current(DC)
Junction Temperature
Storage Temperature Range
Total Power Dissipation
VCBO
VCEO
VEBO
IC
Tj
TsTG
PD
Ratings
500
400
6
300
+150
-55 ~ +150
625
Unit
V
V
V
mA
ć
ć
mW
Electrical Characteristics(Ta = 25к,unless otherwise specified)
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
BVCBO
500
-
-
V
IC=100uA
BVCEO
400
-
-
V
IC=1mA
BVEBO
6
-
-
V
IE=10uA
ICBO
-
-
100
nA
VCB=400V
IEBO
-
-
100
nA
VEB=4V
ICES
-
-
500
nA
VCE=400V
VCE(sat)1
-
-
350
mV
IC=1.0mA, IB=0.1mA
VCE(sat)2
-
-
350
mV
IC=20mA, IB=2mA
VCE(sat)3
-
-
750
mV
IC=50mA, IB=5mA
VBE(sat)
-
-
750
mV
IC=10mA, IB=1mA
hFE1
40
-
-
VCE=10V, IC=1mA
hFE2
50
-
300
VCE=10V, IC=10mA
hFE3
45
-
-
VCE=10V, IC=50mA
hFE4
40
-
-
VCE=10V, IC=100mA
Cob
-
4
6
pF
VCB=20V, f=1MHz,IE=0
Classification of h_FE2
Rank
N
SD
Range
50-300
70-210
SUM
120-300
GMPSA44
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