GMPSA14 Datasheet, PDF (1/2 Pages) GTM CORPORATION – NPN SILICON DARLINGTON TRANSISTOR

CORPORATION ISSUED DATE :2004/12/27
REVISED DATE :
GMPSA14
NPN SILICON DARLINGTON TRANSISTOR
Description
The GMPSA14 is designed for darlington applications requiring extremely high current gain at collector to 500mA.
Features
*High D.C. Current Gain
*Complementary to GMPSA64
Package Dimensions
D
E
S1
TO-92
b1
S E A T IN G
PLANE
C
e1
b
e
Absolute Maximum Ratings at Ta = 25к
Parameter
Symbol
Junction Temperature
Tj
Storage Temperature
Tstg
Collector to Base Voltage
VCBO
Collector to Emitter Voltage
VCES
Emitter to Base Voltage
VEBO
Collector Current
IC
Total Power Dissipation
PD
Characteristics at
Symbol
BVCBO
BVCES
BVEBO
ICBO
IEBO
*VCE(sat)
*VBE(on)
*hFE1
*hFE2
fT
Cob
Min.
30
30
10
-
-
-
-
10
20
125
-
Ta = 25к
Typ.
-
-
-
-
-
-
-
-
-
-
-
Max.
-
-
-
100
100
1.5
2.0
-
-
-
6
Unit
V
V
V
nA
nA
V
V
K
K
MHz
pF
REF.
A
S1
b
b1
C
Millimeter
Min. Max.
4.45 4.7
1.02
-
0.36 0.51
0.36 0.76
0.36 0.51
REF.
D
E
L
e1
e
Millimeter
Min.
Max.
4.44
4.7
3.30
3.81
12.70
-
1.150 1.390
2.42
2.66
Ratings
Unit
+150
ć
-55 ~ +150
ć
30
V
30
V
10
V
500
mA
625
mW
Test Conditions
IC=100uA, IE=0
IC=100uA , VBE=0
IE=10uA , IC=0
VCB=30V, IE = 0
VEB=10V, IC=0
IC=100mA, IB=0.1mA
VCE=5V, IC=100mA
VCE=5V, IC=10mA
VCE=5V, IC=100mA
VCE=5V, IC=10mA, f=100MHz
VCB=10V, IE = 0,f=1MHz
* Pulse Test: Pulse WidthЉ380 s, Duty CycleЉ2%
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