GMPSA13 Datasheet, PDF (1/3 Pages) GTM CORPORATION – NPN SILICON DARLINGTON TRANSISTOR

CORPORATION ISSUED DATE :2004/08/19
REVISED DATE :2004/11/29B
GM PSA13 _{NPN SILICON DARLINGTON TRANSISTOR}
Description
The GMPSA13 is designed for darlington applications requiring extremely high current gain at collector to 500mA.
Features
*High D.C. Current Gain
*Complementary to GMPSA63
Package Dimensions
D
E
S1
TO-92
b1
S E A T IN G
PLANE
C
e1
b
e
Absolute Maximum Ratings at Ta = 25к
Parameter
Symbol
Junction Temperature
Tj
Storage Temperature
Tstg
Collector to Base Voltage
VCBO
Collector to Emitter Voltage
VCES
Emitter to Base Voltage
VEBO
Collector Current
IC
Total Power Dissipation
PD
REF.
A
S1
b
b1
C
Millimeter
Min. Max.
4.45 4.7
1.02
-
0.36 0.51
0.36 0.76
0.36 0.51
REF.
D
E
L
e1
e
Millimeter
Min.
Max.
4.44
4.7
3.30
3.81
12.70
-
1.150 1.390
2.42
2.66
Ratings
Unit
+150
ć
-55 ~ +150
ć
30
V
30
V
10
V
500
mA
625
mW
Characteristics at
Symbol
BVCBO
BVCES
BVEBO
ICBO
IEBO
*VCE(sat)1
*VCE(sat)2
*hFE1
*hFE2
*hFE3
fT
Cob
Min.
30
30
10
-
-
-
-
5
10
-
125
-
Ta = 25к
Typ.
-
-
-
-
-
-
1.0
-
-
50
-
-
Max.
-
-
-
100
100
1.5
-
-
-
-
-
6
Unit
V
V
V
nA
nA
V
V
K
K
K
MHz
pF
Test Conditions
IC=100uA ,IE=0
IC=100uA ,VBE=0
IE=10uA ,IC=0
VCB=30V, IE = 0
VEB=10V, Ic = 0
IC=100mA, IB=0.1mA
IC=500mA, IB=0.5mA
VCE=5V, IC=10mA
VCE=5V, IC=100mA
VCE=5V, IC=500mA
VCE=5V, IC=10mA, f=100MHz
VCB=10V, IE = 0,f=1MHz
Pulse Test: Pulse WidthЉ380us, Duty CycleЉ˅%
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