GMBTA94 Datasheet, PDF (1/2 Pages) GTM CORPORATION – PNP EPITAXIAL PLANAR TRANSISTOR

G M B TA9 4
ISSUED DATE :2002/03/25
REVISED DATE :2006/10/13B
PNP EPITAXIAL PLANAR TRANSISTOR
Description
The GMBTA94 is designed for application requires high voltage.
Package Dimensions
TPU.34)QBDLBHF*
Absolute Maximum Ratings at Ta = 25к
Parameter
Symbol
Junction Temperature
Tj
Storage Temperature
Tstg
Collector to Base Voltage
VCBO
Collector to Emitter Voltage
VCEO
Emitter to Base Voltage
VEBO
Collector Current
IC
Total Power Dissipation
PD
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
2.70 3.10
2.40 2.80
1.40 1.60
0.35 0.50
0 0.10
0.45 0.55
REF.
G
H
K
J
L
M
Millimeter
Min. Max.
1.90 REF.
1.00
1.30
0.10
0.20
0.40
-
0.85
1.15
0°
10°
Ratings
Unit
+150
к
-55~+150
к
-400
V
-400
V
-6
V
-300
mA
350
mW
Electrical Characteristics (Ta = 25к, unless otherwise noted)
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
BVCBO
-400
-
-
V
IC=-100uA, IE=0
BVCEO
-400
-
-
V
IC=-1mA, IB=0
BVEBO
-6
-
-
V
IE=-10uA, IC=0
ICBO
-
-
-100
nA VCB=-400V, IE=0
IEBO
-
-
-100
nA VEB=-4V, IC=0
ICES
-
-
-500
nA VCE=-400V
VCE(sat)1
-
-
-350
mV IC=-1mA, IB=-0.1mA
VCE(sat)2
-
-
-500
mV IC=-20mA, IB=-2mA
VCE(sat)3
-
-
-750
mV IC=-50mA, IB=-5mA
VBE(sat)
-
-
-750
mV IC=-10mA, IB=-1mA
hFE1
40
-
-
VCE=-10V, IC=-1mA
hFE2
50
-
300
VCE=-10V, IC=-10mA
hFE3
45
-
-
VCE=-10V, IC=-50mA
hFE4
20
-
-
VCE=-10V, IC=-100mA
GMBTA94
Page: 1/2