GMBTA64 Datasheet, PDF (1/2 Pages) GTM CORPORATION – PNP SILICON TRANSISTOR

1/2
G M B TA6 4
PNP SILICON TRANSISTOR
Description
The GMBTA64 is designed for application requiring extremely high current gain at collector current to 500mA.
Features
Ô¦High D.C. Current Gain
Ô¦For Complementary with NPN Type GMBTA14
Package Dimensions
TPU.34)QBDLBHF*
Absolute Maximum Ratings at Ta = 25к
Parameter
Symbol
Junction Temperature
Tj
Storage Temperature
Tstg
Collector to Base Voltage
VCBO
Collector to Emitter Voltage
VCEO
Emitter to Base Voltage
VEBO
Collector Current
IC
Total Power Dissipation
PD
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
2.70 3.10
2.40 2.80
1.40 1.60
0.35 0.50
0
0.10
0.45 0.55
REF.
G
H
K
J
L
M
Millimeter
Min. Max.
1.90 REF.
1.00 1.30
0.10 0.20
0.40
-
0.85 1.15
0̓
10̓
Ratings
Unit
+150
ć
-55 ~ +150
ć
-30
V
-30
V
-10
V
-500
mA
225
mW
Characteristics at
Symbol
Min.
BVCBO
-30
BVCES
-30
BVEBO
-10
ICBO
-
IEBO
-
VCE(sat)
-
VBE(on)
-
HFE1
10K
HFE2
20K
fT
125
Ta = 25к
Typ.
-
-
-
-
-
-
-
-
-
Max.
-
-
-
-100
-100
-1.5
-2
-
-
Unit
V
V
V
nA
nA
V
V
MHz
Test Conditions
IC=-100uA , IE=0
IC=-100uA, IB=0
IE=-10uA, IC=0
VCB=-30V, IE=0
VCE=-10V
IC=-100mA, IB=-0.1mA
VCE=-5V, IC=-100mA
VCE=-5V, IC=-10mA
VCE=-5V, IC=-100mA
VCE=-5V, IC=-100mA, f=100MHz
*Pulse Test :Pulse width 380us,Duty Cycly 2%