GMBTA56 Datasheet, PDF (1/2 Pages) GTM CORPORATION – PNP SILICON TRANSISTOR

1/2
G M B TA5 6
PNP SILICON TRANSISTOR
Description
The GMBTA56 is amplifier applications.
Package Dimensions
TPU.34)QBDLBHF*
Absolute Maximum Ratings at Ta = 25к
Parameter
Symbol
Junction Temperature
Tj
Storage Temperature
Tstg
Collector to Base Voltage
VCBO
Collector to Emitter Voltage
VCEO
Emitter to Base Voltage
VEBO
Collector Current
IC
Total Power Dissipation
PD
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
2.70 3.10
2.40 2.80
1.40 1.60
0.35 0.50
0
0.10
0.45 0.55
REF.
G
H
K
J
L
M
Millimeter
Min. Max.
1.90 REF.
1.00 1.30
0.10 0.20
0.40
-
0.85 1.15
0̓
10̓
Ratings
Unit
+150
ć
-55 ~ +150
ć
-80
V
-80
V
-4
V
-500
mA
225
mW
Characteristics at
Symbol
BVCBO
Min.
-80
BVCEO
-80
BVEBO
-4
ICBO
-
ICEO
-
VCE(sat)
-
VBE(on)
-
HFE1
50
HFE2
50
fT
100
Ta = 25к
Typ.
-
-
-
-
-
-
-
-
-
Max.
-
-
-
-100
-100
-250
-1.2
-
-
Unit
V
V
V
nA
nA
mV
V
MHz
Test Conditions
IC=-100uA , IE=0
IC=-1mA, IB=0
IE=-100uA, IC=0
VCB=-80V, IE=0
VCE=-60V
IC=-100mA, IB=-10mA
VCE=-1V, IC=-100mA
VCE=-1V, IC=-10mA
VCE=-1V, IC=-100mA
VCE=-2V, IC=-10mA, f=1MHz