GMBTA42 Datasheet, PDF (1/2 Pages) List of Unclassifed Manufacturers – NPN EPITAXIAL PLANAR TRANSISTOR

ISSUED DATE :2003/11/27
REVISED DATE :2005/01/21B
G M B TA4 2
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The GMBTA42 is designed for high voltage transistor.
Package Dimensions
TPU.34)QBDLBHF*
Absolute Maximum Ratings at Ta = 25к
Parameter
Junction Temperature
Storage Temperature
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Symbol
Tj
Tstg
VCBO
VCEO
VEBO
IC
Total Power Dissipation
PD
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
2.70 3.10
2.40 2.80
1.40 1.60
0.35 0.50
0
0.10
0.45 0.55
REF.
G
H
K
J
L
M
Millimeter
Min. Max.
1.90 REF.
1.00
1.30
0.10
0.20
0.40
-
0.85
1.15
0̓
10̓
Ratings
Unit
+150
ć
-55~+150
ć
300
V
300
V
6
V
500
mA
350
mW
Characteristics at Ta = 25к
Symbol
BVCBO
BVCEO
Min.
300
300
Typ.
-
-
BVEBO
6
-
ICBO
IEBO
-
-
-
-
VCE(sat)
-
-
VBE(sat)
hFE1
hFE2
hFE3
fT
-
-
25
-
40
-
40
-
50
-
Cob
-
-
Max.
-
-
-
100
100
500
900
-
-
-
3
Unit
V
V
V
nA
nA
mV
mV
MHz
pF
Test Conditions
IC=100uA , IE=0
IC=1mA ,IB=0
IE=100uA ,IC=0
VCB=200V, IE=0
VEB=6V ,IC=0
IC=20mA, IB=2mA
IC=20mA, IB=2mA
VCE=10V, IC=1mA
VCE=10V, IC=10mA
VCE=10V, IC=30mA
VCE=20V, IC=10mA, f=100MHz
VCB=20V, f=1MHz
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