GMBTA06 Datasheet, PDF (1/2 Pages) List of Unclassifed Manufacturers – NPN SILICON TRANSISTOR

G M B TA0 6
NPN SILICON TRANSISTOR
Description
The GMBTA06 is designed for general purpose amplifier applications.
Package Dimensions
ISSUED DATE :2003/07/15
REVISED DATE :2006/05/26B
TPU.34)QBDLBHF*
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
2.70 3.10
2.40 2.80
1.40 1.60
0.35 0.50
0
0.10
0.45 0.55
REF.
G
H
K
J
L
M
Millimeter
Min.
Max.
1.90 REF.
1.00
1.30
0.10
0.20
0.40
-
0.85
1.15
0°
10°
Absolute Maximum Ratings at Ta = 25к
Parameter
Symbol
Ratings
Unit
Junction Temperature
Tj
+150
к
Storage Temperature
Tstg
-55~+150
к
Collector to Base Voltage
VCBO
80
V
Collector to Emitter Voltage
VCEO
80
V
Emitter to Base Voltage
VEBO
4
V
Collector Current
IC
500
mA
Total Power Dissipation(Note1)
PD
350
mW
Note 1.Device mounted on FR-4=1.6*1.6*0.06in
Electrical Characteristics(Ta = 25к,unless otherwise noted)
Symbol
BVCBO
Min.
80
Typ.
-
Max.
-
Unit
V
Test Conditions
IC=100uA, IE=0
BVCEO
80
-
-
V
IC=1mA, IB=0
BVEBO
4
-
-
V
IE=100uA, IC=0
ICBO
-
-
100
nA VCB=80V, IE=0
ICEO
-
-
100
nA VCE=80V, IB=0
*VCE(sat)
-
-
250
mV IC=100mA, IB=10mA
*VBE(on)
-
-
1.2
V
VCE=1V, IC=100mA
*hFE1
50
-
-
VCE=1V, IC=10mA
*hFE2
50
-
-
VCE=1V, IC=100mA
fT
100
-
-
MHz VCE=2V, IC=10mA, f=100MHz
* Pulse Test: Pulse WidthЉ380 s, Duty CycleЉ2%
GMBTA06
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