GMBT9015 Datasheet, PDF (1/2 Pages) GTM CORPORATION – PNP EPITAXIAL PLANAR TRANSISTOR

ISSUED DATE :2003/05/31
REVISED DATE :2004/12/23B
GMBT9015
PNP EPITAXIAL PLANAR TRANSISTOR
Description
The GMBT9015 is designed for use in pre-amplifier of low level and low noise.
Package Dimensions
TPU.34)QBDLBHF*
Absolute Maximum Ratings at Ta = 25к
Parameter
Junction Temperature
Storage Temperature
Collector to Base Voltage
Collector to Emitter Voltage
Symbol
Tj
Tstg
VCBO
VCEO
Emitter to Base Voltage
Collector Current
Total Power Dissipation
VEBO
IC
PD
Characteristics at Ta = 25к
Symbol
BVCBO
BVCEO
Min.
-50
-45
Typ.
-
-
Max.
-
-
BVEBO
ICBO
IEBO
-5
-
-
-
-
-50
-
-
-50
*VCE(sat)1
*VCE(sat)2
VBE(on)
*hFE
fT
Cob
-
-0.2
-0.7
-
-0.82
-1
-0.6
-0.65
-0.75
100
200
600
100
190
-
-
4.5
7
Classification Of hFE
Rank
Range
B
100-300
C
200-600
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
2.70 3.10
2.40 2.80
1.40 1.60
0.35 0.50
0
0.10
0.45 0.55
REF.
G
H
K
J
L
M
Millimeter
Min. Max.
1.90 REF.
1.00
1.30
0.10
0.20
0.40
-
0.85
1.15
0̓
10̓
Ratings
Unit
+150
ć
-55 ~ +150
ć
-50
V
-45
V
-5
V
-100
mA
225
mW
Unit
V
V
V
nA
nA
V
V
V
MHz
pF
IC=-100uA, IE =0
IC=-1mA, IB=0
Test Conditions
IE=-100uA, IC=0
VCB=-50V , IE=0
VEB=-5V , IC=0
IC=-100mA, IB=-5mA
IC=-100mA, IB=-5mA
VCE=-5V, IC=-2mA
VCE=-5V, IC=-1mA
VCE=-5V,IC=-10mA
VCB=-10V, f=1MHz,IE=0
* Pulse Test: Pulse WidthЉ380 s, Duty CycleЉ2%
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