GMBT9014 Datasheet, PDF (1/3 Pages) GTM CORPORATION – PNP EPITAXIAL TRANSISTOR

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GMBT9014
NPN EPITAXIAL TRANSISTOR
Description
The GMBT9014 is designed for general purpose amplifier applications.
Package Dimensions
TPU.34)QBDLBHF*
Absolute Maximum Ratings at Ta = 25к
Parameter
Symbol
Junction Temperature
Tj
Storage Temperature
Tstg
Collector to Base Voltage
VCBO
Collector to Emitter Voltage
VCEO
Emitter to Base Voltage
VEBO
Collector Current
IC
Total Power Dissipation
PD
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
2.70 3.10
2.40 2.80
1.40 1.60
0.35 0.50
0
0.10
0.45 0.55
REF.
G
H
K
J
L
M
Millimeter
Min. Max.
1.90 REF.
1.00 1.30
0.10 0.20
0.40
-
0.85 1.15
0̓
10̓
Ratings
Unit
+150
ć
-55 ~ +150
ć
50
V
45
V
5
V
100
mA
225
mW
Characteristics at
Symbol
Min.
BVCBO
50
BVCEO
45
BVEBO
5
ICBO
-
IEBO
-
VCE(sat)
-
VBE(sat)
-
VBE(on)
0.58
hFE
100
fT
150
Cob
-
Ta = 25к
Typ.
-
-
-
-
-
0.14
0.84
0.63
280
270
2.20
Max.
-
-
-
50
50
0.3
1
0.7
1000
-
3.5
Classification Of hFE
Rank
hFE
B
100 - 300
C
200-600
Unit
V
V
V
nA
nA
V
V
V
MHz
pF
Test Conditions
IC=100uA , IE=0
IC=1mA, IB=0
IE=100uA, IC=0
VCB=50V, IE=0
VEB=5V, IC=0
IC=100mA, IB=5mA
IC=100mA, IB=5mA
VCE=5V, IC=2mA
VCE=5V, IC=1mA
VCE=5V, IC=10mA
VCB=10V, f=1MHz, IE=0
D
400-1000