GMBT3904 Datasheet, PDF (1/2 Pages) List of Unclassifed Manufacturers – NPN EPITAXIAL PLANAR TRANSISTOR

ISSUED DATE :2003/12/12
REVISED DATE :2005/06/15B
GMBT3904
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The GMBT3904 is designed for general purpose switching and amplifier applications.
Features
*Pb-free package are available
*Collector-emitter voltage 40V
*Complementary to GMBT3906
Package Dimensions
TPU.34)QBDLBHF*
Absolute Maximum Ratings at Ta = 25к
Parameter
Junction Temperature
Storage Temperature
Collector to Base Voltage
Symbol
Tj
Tstg
VCBO
Collector to Emitter Voltage
VCEO
Emitter to Base Voltage
Collector Current
Total Power Dissipation
VEBO
IC
PD
Characteristics at
Symbol
BVCBO
BVCEO
BVEBO
ICEX
IEBO
VCE(sat)1
VCE(sat)2
VBE(sat)1
VBE(sat)2
hFE1
hFE2
hFE3
hFE4
hFE5
fT
Cob
Cib
td
tr
tstg
tf
Min.
60
40
6
-
-
-
-
650
-
40
70
100
60
30
300
-
-
-
-
-
-
Ta = 25к
Typ.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Max.
-
-
-
50
50
200
300
850
950
-
-
300
-
-
-
4
8
35
35
200
50
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
2.70 3.10
2.40 2.80
1.40 1.60
0.35 0.50
0 0.10
0.45 0.55
REF.
G
H
K
J
L
M
Millimeter
Min. Max.
1.90 REF.
1.00
1.30
0.10
0.20
0.40
-
0.85
1.15
0̓
10̓
Ratings
Unit
+150
ć
-65 ~ +150
ć
60
V
40
V
6
V
200
mA
350
mW
Unit
V
V
V
nA
nA
mV
mV
mV
mV
MHz
pF
pF
ns
ns
ns
ns
Test Conditions
IC=10uA , IE=0
IC=1mA , IB=0
IE=10uA, IC=0
VCE=30V, VEB=3V
VEB=3V
IC=10mA, IB=1mA
IC=50mA, IB=5mA
IC=10mA, IB=1mA
IC=50mA, IB=5mA
VCE=1V, IC=0.1mA
VCE=1V, IC=1mA
VCE=1V, IC=10mA
VCE=1V, IC=50mA
VCE=1V, IC=100mA
VCE=20V, IE=-10mA, f=100MHz
VCB=10V, f=100KHz
VEB=0.5V, f=100KHz
VCC=3V, VBE(OFF)=0.5V, IC=10mA, IB1=1mA
VCC=3V, VBE(OFF)=0.5V, IC=10mA, IB1=1mA
VCC=3V, IC=10mA, IB1=-IB2=1mA
VCC=3V, IC=10mA, IB1=-IB2=1mA
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