GMBT3019 Datasheet, PDF (1/1 Pages) List of Unclassifed Manufacturers – NPN EPITAXIAL PLANAR TRANSISTOR

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GMBT3019
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The GMBT3019 is designed for general purpose amplifier applications and switching requiring collector currents 1A.
Package Dimensions
TPU.34)QBDLBHF*
Absolute Maximum Ratings at Ta = 25к
Parameter
Junction Temperature
Storage Temperature
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Symbol
Tj
Tstg
VCBO
VCEO
VEBO
IC
PD
Characteristics at Ta = 25к
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
VCE(sat)
VBE(sat)
hFE1
hFE2
hFE3
hFE4
hFE5
fT
Cob
Min.
140
80
7
-
-
-
-
50
90
100
50
15
100
-
Typ.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Max.
-
-
-
50
50
0.2
1.1
-
-
300
-
-
-
12
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
2.70 3.10
2.40 2.80
1.40 1.60
0.35 0.50
0
0.10
0.45 0.55
REF.
G
H
K
J
L
M
Millimeter
Min. Max.
1.90 REF.
1.00 1.30
0.10 0.20
0.40
-
0.85 1.15
0̓
10̓
Ratings
Unit
+150
ć
-55 ~ +150
ć
140
V
80
V
7
V
1
A
350
mW
Unit
V
V
V
nA
nA
V
V
MHz
pF
Test Conditions
IC=100uA
IC=30mA
IE=100uA
VCB=90V
VEB=5V
IC=150mA, IB=15mA
IC=150mA, IB=15mA
VCE=10V, IC=0.1mA
VCE=10V, IC=10mA
VCE=10V, IC=150mA
VCE=10V, IC=500mA
VCE=10V, IC=1000mA
VCE=50mV, IC=50mA, f=100MHz
VCE=10V, IE=0, f=1MHz
Important Notice:
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM.
GTM reserves the right to make changes to its products without notice.
GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems.
GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C.
TEL : [phone] FAX : [phone]
China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China
TEL : [phone] ~ 4 FAX : [phone]