GMBT2907A Datasheet, PDF (1/4 Pages) List of Unclassifed Manufacturers – PNP EPITAXIAL PLANAR TRANSISTOR

CORPORATION ISSUED DATE :2003/06/02
REVISED DATE :2005/06/27B
GMBT2907A
PNP EPITAXIAL PLANAR TRANSISTOR
Description
The GMBT2907A is designed for general purpose amplifier and high speed, medium-power switching applications.
Features
Ô¦Low collector saturation voltage
Ô¦High speed switching
Ô¦For complementary use with NPN type GMBT2222A
Package Dimensions
TPU.34)QBDLBHF*
Absolute Maximum Ratings at Ta = 25к
Parameter
Symbol
Junction Temperature
Tj
Storage Temperature
Collector to Base Voltage at Ta=25к
Collector to Emitter Voltage at Ta=25к
Emitter to Base Voltage at Ta=25к
Collector Current at Ta=25к
Total Power Dissipation at Ta=25к
Tstg
VCBO
VCEO
VEBO
IC
PD
Characteristics at Ta = 25к
Symbol
BVCBO
BVCEO
BVEBO
ICBO
ICEX
*VCE(sat)1
*VCE(sat)2
*VBE(sat)1
*VBE(sat)2
*hFE1
*hFE2
*hFE3
*hFE4
*hFE5
fT
Cob
Min.
-60
-60
-5
-
-
-
-
-
-
75
100
100
100
50
200
-
Typ.
-
-
-
-
-
-0.2
-0.5
-
-
-
-
-
180
-
-
-
Max.
-
-
-
-10
-50
-0.4
-1.6
-1.3
-2.6
-
-
-
300
-
-
8.0
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
2.70 3.10
2.40 2.80
1.40 1.60
0.35 0.50
0 0.10
0.45 0.55
REF.
G
H
K
J
L
M
Millimeter
Min. Max.
1.90 REF.
1.00
1.30
0.10
0.20
0.40
-
0.85
1.15
0̓
10̓
Ratings
Unit
+150
ć
-55 ~ +150
ć
-60
V
-60
V
-5
V
-600
mA
225
mW
Unit
V
V
V
nA
nA
V
V
mV
V
MHz
pF
Test Conditions
IC=-10uA, IE=0
IC=-10mA, IB=0
IE=-10uA, IC=0
VCE=-50V, IE=0
VCE=-30V, VBE(OFF)=-0.5V
IC=-150mA, IB=-15mA
IC=-500mA, IB=-50mA
IC=-150mA, IB=-15mA
IC=-500mA, IB=-50mA
VCE=-10V, IC=-0.1mA
VCE=-10V, IC=-1mA
VCE=-10V, IC=-10mA
VCE=-10V, IC=-150mA
VCE=-10V, IC=-500mA
VCE=-20V, IC=-50mA, f=100MHz
VCE=-10V, IE=0, f=1MHz
* Pulse Test: Pulse WidthЉ380 s, Duty CycleЉ2%
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