GMBT2714 Datasheet, PDF (1/2 Pages) GTM CORPORATION – NPN EPITAXIAL PLANAR TRANSISTOR

ISSUED DATE :2005/11/22
REVISED DATE :
GMBT2714
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The GMBT2714 is designed for use in FM, RF, MIX and IF amplifier application.
Features
Ô¦High frequency
Ô¦Very low capacitance
Package Dimensions
TPU.34)QBDLBHF*
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
2.70 3.10
2.40 2.80
1.40 1.60
0.35 0.50
0 0.10
0.45 0.55
REF.
G
H
K
J
L
M
Millimeter
Min. Max.
1.90 REF.
1.00
1.30
0.10
0.20
0.40
-
0.85
1.15
0°
10°
Absolute Maximum Ratings at Ta = 25к
Parameter
Symbol
Ratings
Unit
Junction Temperature
Tj
+150
к
Storage Temperature
Tstg
-55~+150
к
Collector to Base Voltage
VCBO
40
V
Collector to Emitter Voltage
VCEO
30
V
Emitter to Base Voltage
VEBO
4
V
Collector Current
IC
20
mA
Total Power Dissipation
PD
225
mW
Electrical Characteristics (Ta = 25к, unless otherwise noted)
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
BVCBO
40
-
-
V
IC=100uA, IE=0
BVCEO
30
-
-
V
IC=1mA, IB=0
BVEBO
4
-
-
V
IE=10uA, IC=0
ICBO
-
-
500
nA
VCB=18V, IE=0
IEBO
-
-
500
nA
VEB=4V, IC=0
VCE(sat)
-
-
500
mV IC=4mA, IB=0.4mA
VBE(on)
-
-
950
mV VCE=10V, IC=4mA
hFE
40
-
200
VCE=6V, IC=1mA
fT
650
-
-
MHz VCE=10V, IC=4mA, f=100MHz
Cob
-
0.8
-
pF VCB=10V, f=1MHz
Classification Of hFE
Rank
R
Range
40 ~ 80
O
70 ~ 140
Y
100 ~ 200
GMBT2714
Page: 1/2