GMBT2411 Datasheet, PDF (1/2 Pages) GTM CORPORATION – NPN SILICON PLANAR MEDIUM POWER TRANSISTOR

CORPORATION ISSUED DATE :2006/09/14
REVISED DATE :
GM BT 2 4 11 _{NPN SILICON PLANAR MEDIUM POWER TRANSISTOR}
Description
The GMBT2411 is designed for medium power amplifier applications.
Features
Ô¦I_CMax.=500mA
Ô¦Low V_CE(sat). Optimal for low voltage operation.
Ô¦Complementary to GMBT1036
Package Dimensions
TPU.34)QBDLBHF*
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
2.70 3.10
2.40 2.80
1.40 1.60
0.35 0.50
0 0.10
0.45 0.55
REF.
G
H
K
J
L
M
Millimeter
Min. Max.
1.90 REF.
1.00
1.30
0.10
0.20
0.40
-
0.85
1.15
0°
10°
Absolute Maximum Ratings at Ta = 25к
Parameter
Symbol
Ratings
Unit
Junction Temperature
Tj
+150
к
Storage Temperature
Tstg
-55~+150
к
Collector to Base Voltage
VCBO
40
V
Collector to Emitter Voltage
VCEO
32
V
Emitter to Base Voltage
VEBO
5
V
Collector Current
IC
500
mA
Total Power Dissipation
PD
225
mW
Electrical Characteristics (Ta = 25к, unless otherwise stated)
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
BVCBO
40
-
-
V
IC=100uA , IE=0
BVCEO
32
-
-
V
IC=1mA, IB=0
BVEBO
5
-
-
V
IE=100uA ,IC=0
ICBO
-
-
1
uA VCB=20V, IE=0
IEBO
-
-
1
uA VEB=4V, IC=0
*VCE(sat)
-
-
400
mV IC=500mA, IB=50mA
*hFE
82
-
390
VCE=3V, IC=100mA
fT
-
250
-
MHz VCE=5V, IE=-20mA, f=100MHz
Cob
-
6
-
pF VCB=10V, IE=0, f=1MHz
*Measured under pulse condition. Pulse width=300 s, Duty CycleЉ2%
Classification Of hFE
Rank
CP
Range
82 - 180
CQ
120 - 270
CR
180 - 390
GMBT2411
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