GMBT2222A Datasheet, PDF (1/4 Pages) List of Unclassifed Manufacturers – NPN EPITAXIAL PLANAR TRANSISTOR

CORPORATION ISSUED DATE :2001/03/12
REVISED DATE :2005/06/27B
GMBT2222A
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The GMBT2222A is designed for general purpose amplifier and high speed, medium-power switching applications.
Features
Ô¦High frequency current gain
Ô¦High speed switching
Ô¦For complementary use with PNP type GMBT2907A
Package Dimensions
TPU.34)QBDLBHF*
Absolute Maximum Ratings at Ta = 25к
Parameter
Symbol
Junction Temperature
Tj
Storage Temperature
Collector to Base Voltage at Ta=25к
Collector to Emitter Voltage at Ta=25к
Emitter to Base Voltage at Ta=25к
Collector Current at Ta=25к
Total Power Dissipation at Ta=25к
Tstg
VCBO
VCEO
VEBO
IC
PD
Characteristics at
Symbol
BVCBO
BVCEO
BVEBO
ICBO
ICEX
IEBO
*VCE(sat)1
*VCE(sat)2
*VBE(sat)1
*VBE(sat)2
*hFE1
*hFE2
*hFE3
*hFE4
*hFE5
fT
Cob
Min.
75
40
6
-
-
-
-
-
-
-
35
50
75
100
40
300
-
Ta = 25к
Typ.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Max.
-
-
-
10
10
10
500
1.0
1.2
2.0
-
-
-
300
-
-
8
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
2.70 3.10
2.40 2.80
1.40 1.60
0.35 0.50
0 0.10
0.45 0.55
REF.
G
H
K
J
L
M
Millimeter
Min. Max.
1.90 REF.
1.00
1.30
0.10
0.20
0.40
-
0.85
1.15
0̓
10̓
Ratings
Unit
+150
ć
-55 ~ +150
ć
75
V
40
V
6
V
600
mA
225
mW
Unit
V
V
V
nA
nA
nA
mV
V
V
V
MHz
pF
Test Conditions
IC=100uA , IE=0
IC=10mA, IB=0
IE=10uA, IC=0
VCB=60V, IE=0
VCE=60V ,VEB(OFF)=3V
VEB=3V, IC=0
IC=380mA, IB=10mA
IC=500mA, IB=50mA
IC=150mA, IB=15mA
IC=500mA, IB=50mA
VCE=10V, IC=100uA
VCE=10V, IC=1mA
VCE=10V, IC=10mA
VCE=10V, IC=150mA
VCE=10V, IC=500mA
VCB=20V, IC=20mA, f=100MHz
VCB=10V, IE=0, f=1MHz
* Pulse Test: Pulse WidthЉ380 s, Duty CycleЉ2%
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