GMBT195 Datasheet, PDF (1/2 Pages) GTM CORPORATION – PNP SILICON PLANAR MEDIUM POWER TRANSISTOR

CORPORATION ISSUED DATE :2006/06/08
REVISED DATE :
GMBT195
PNP SILICON PLANAR MEDIUM POWER TRANSISTOR
Description
The GMBT195 is designed for medium power amplifier applications.
Features
Ô¦-60 Volt V_CEO
Ô¦-1 Amp continuous current
Ô¦Complementary to GMBT194
Package Dimensions
TPU.34)QBDLBHF*
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
2.70 3.10
2.40 2.80
1.40 1.60
0.35 0.50
0 0.10
0.45 0.55
REF.
G
H
K
J
L
M
Millimeter
Min. Max.
1.90 REF.
1.00
1.30
0.10
0.20
0.40
-
0.85
1.15
0°
10°
Absolute Maximum Ratings at Ta = 25к
Parameter
Symbol
Ratings
Unit
Junction Temperature
Tj
+150
к
Storage Temperature
Tstg
-55~+150
к
Collector to Base Voltage
VCBO
-80
V
Collector to Emitter Voltage
VCEO
-60
V
Emitter to Base Voltage
VEBO
-5
V
Collector Current (DC)
IC
-1
A
Collector Current (Pulse)
IC
-2
A
Total Power Dissipation(Note1)
PD
500
mW
Note 1.Device mounted on FR-4=1.6*1.6*0.06in
Electrical Characteristics (Ta = 25к, unless otherwise stated)
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
BVCBO
-80
-
-
V
IC=-100uA , IE=0
*BVCEO
-60
-
-
V
IC=-10mA, IB=0
BVEBO
-5
-
-
V
IE=-100uA ,IC=0
ICBO
-
-
-100
nA VCB=-60V, IE=0
ICES
-
-
-100
nA
VCES=-60V
IEBO
-
-
-100
nA VEB=-4V, IC=0
*VCE(sat)1
-
-
-0.3
V
IC=-500mA, IB=-50mA
*VCE(sat)2
-
-
-0.6
V
IC=-1A, IB=-100mA
*VBE(sat)
-
-
-1.2
V
IC=-1A, IB=-100mA
*VBE(on)
-
-
-1.0
V
VCE=-5V, IC=-1A
*hFE1
100
-
-
VCE=-5V, IC=-1mA
*hFE2
100
-
300
VCE=-5V, IC=-500mA
*hFE3
80
-
-
VCE=-5V, IC=-1A
*hFE4
15
-
-
VCE=-5V, IC=-2A
fT
150
-
-
MHz VCE=-10V, IC=-50mA, f=100MHz
Cob
-
-
10
pF VCB=-10V, IE=0, f=1MHz
*Measured under pulse condition. Pulse width=300 s, Duty CycleЉ2%
GMBT195
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