GMBT1623 Datasheet, PDF (1/2 Pages) GTM CORPORATION – NPN EPITAXIAL PLANAR TRANSISTOR

ISSUED DATE :2003/01/09
REVISED DATE :2004/12/16B
GMBT1623
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The GMBT1623 is designed for use driver stage of AF amplifier and general purpose application.
Package Dimensions
TPU.34)QBDLBHF*
Absolute Maximum Ratings at Ta = 25к
Parameter
Junction Temperature
Storage Temperature
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Symbol
Tj
Tstg
VCBO
VCEO
VEBO
IC
PD
Characteristics at Ta = 25к
Symbol
BVCBO
BVCEO
BVEBO
ICBO
Min.
60
50
5
-
Typ.
-
-
-
-
Max.
-
-
-
100
IEBO
*VCE(sat)
*VBE(sat)
*hFE1
*hFE2
*hFE3
fT
Cob
-
-
100
-
-
250
-
-
1.0
90
-
600
25
-
-
80
-
-
80
-
-
-
-
3.5
Classification of hFE1
Rank
L6P
Range
90 - 180
L6Y
135 - 270
REF
A
B
C
D
E
F
Millimeter
Min. Max.
2.70 3.10
2.40 2.80
1.40 1.60
0.35 0.50
0
0.10
0.45 0.55
REF.
G
H
K
J
L
M
Millimeter
Min. Max.
1.90 REF.
1.00 1.30
0.10 0.20
0.40
-
0.85 1.15
0̓
10̓
Ratings
Unit
+150
ć
-55~+150
ć
60
V
50
V
5
V
150
mA
250
mW
Unit
V
V
V
nA
nA
mV
V
MHz
pF
Test Conditions
IC=100uA
IC=1mA
IE=10uA
VCB=60V
VEB=5V
IC=100mA, IB=10mA
IC=100mA, IB=10mA
VCE=6V, IC=1mA
VCE=6V, IC=150mA
VCE=1V, IC=10mA
VCE=10V, IC=1mA, f=100MHz
VCB=10V, f=1MHz
* Pulse Test: Pulse WidthЉ380 s, Duty CycleЉ2%
L6G
200 - 400
L6B
300 - 600
GMBT1623
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