GMBD4148 Datasheet, PDF (1/1 Pages) List of Unclassifed Manufacturers – high-speed switching application in hybrid thick-and thin-film circuits

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GMBD4148
Description
The GMBD4148 is designed for high-speed switching application in hybrid thick-and thin-film circuits. The devices is manufactured by the
silicon epitaxial planar process and packed in plastic surface mount package.
Package Dimensions
TPU.34)QBDLBHF*
Style : Pin 1.Anode 2.NC 3.Cathode
REF.
A
B
C
D
E
F
Millimeter
Min.
Max.
2.70
3.10
2.40
2.80
1.40
1.60
0.35
0.50
0
0.10
0.45
0.55
REF.
G
H
K
J
L
M
Millimeter
Min. Max.
1.90 REF.
1.00
1.30
0.10
0.20
0.40
-
0.85
1.15
0̓
10̓
Absolute Maximum Ratings at Ta = 25к
Parameter
Junction Temperature
Storage Temperature
Continuous Reverse Voltage
Continuous Forward Current
Peak Forward Surge Current
Symbol
Tj
Tstg
VR
IF
IFSM
Characteristics
Characteristic
Forward Voltage
Reverse Breakdown
Reverse Current
Total Capacitance
Reverse Recovery Time
at Ta = 25к
Symbol
VF
VR
IR
CT
Trr
Min.
-
100
-
-
-
Max.
1
-
5
4
4
Ratings
Unit
+150
ć
-65~+150
ć
70
V
200
mA
500
mA
Unit
Test Conditions
V
IF=10mA
V
IR=100uA
uA
VR=75V
pF
VR=0V,F=1MHz
nS
IF=IR=10mA, RL=100 Measured at IR=1mA
Important Notice:
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM.
GTM reserves the right to make changes to its products without notice.
GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems.
GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C.
TEL : [phone] FAX : [phone]
China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China
TEL : [phone] FAX : [phone]