GMBD3004 Datasheet, PDF (1/2 Pages) GTM CORPORATION – SURFACE MOUNT,SWITCHING DIODE

GMBD3004\A\C\S
S U RFAC E MO U NT, S WIT C HI NG D IO DE
VOLTAGE 350V, CURRENT 0. 225A
Description
The GMBD3004\A\C\S are designed for ultra high speed switching.
Package Dimensions
ISSUED DATE :2004/03/23
REVISED DATE :
TPU.34)QBDLBHF*
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
2.70
3.10
2.40
2.80
1.40
1.60
0.35
0.50
0
0.10
0.45
0.55
REF.
G
H
K
J
L
M
Millimeter
Min.
Max.
1.90 REF.
1.00
1.30
0.10
0.20
0.40
-
0.85
1.15
0̓
10̓
Absolute Maximum Ratings (At TA = 25к unless otherwise specified)
Parameter
Symbol
Ratings
Max. Repetitive Peak Reverse Voltage
VRRM
350
Max. RMS Voltage
VRMS
212
Max. DC Blocking Voltage
VDC
300
Max. Average Forward Rectified Current
IO
225
Non-Repetitive Peak Forward surge Current @Tp =1.0us
@Tp=1.0s
IFSM
4
1
Typical Junction Capacitance between Terminal (Note1)
CJ
5.0
Max. Reverse Recovery Time (Note2)
TRR
50
Power Dissipation
PD
350
Thermal Resistance Junction to Ambient Air
R JA
357
Operation and Storage Temperature Range
TJ, TSTG
-65 ~ +150
Unit
V
V
V
mA
A
pF
nSec
mW
ć/W
ć
Electrical Characteristics (At TA = 25к unless otherwise noted)
Characteristics
Symbol Min.
Max.
Unit
Test Conditions
Reverse Breakdown Voltage
BVR
350
-
V
IR=150uA
Max. instantaneous Forward Voltage
VF
-
1.0
V
IF = 100mA
Max. Average Reverse Current
100
nA
VR = 240V, TA=25ć
IR
-
100
uA
VR = 240V, TA=150ć
Notes: 1. Measured at 1.0 MHz and applied reverse voltage of 0 volts.
2. Measured at applied forward current of 30mA, reverse current of 30mA, RL=100Ó¨ and recovery to IRR=-3mA.
3. ESD sensitive product handling required.
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