GMA64 Datasheet, PDF (1/2 Pages) GTM CORPORATION – NPN EPITAXIAL PLANAR TRANSISTOR

ISSUED DATE :2005/04/04
REVISED DATE :
GMA64
PNP EPITAXIAL PLANAR TRANSISTOR
Description
The GMA64 is a darlington amplifier transistor designed for application requiring extremely high current gain.
Features
Ô¦High DC current gain
Ô¦Complementary with GMA14
Package Dimensions
SOT-89
Absolute Maximum Ratings at Ta = 25к
Parameter
Junction Temperature
Storage Temperature Range
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collect Current(DC)
Total Power Dissipation
Symbol
Tj
TsTG
VCBO
VCES
VEBO
IC
PD
Electrical Characteristics(Ta = 25к)
Symbol
Min.
Typ.
Max.
BVCBO
-30
-
-
BVCES
-30
-
-
BVEBO
-10
-
-
ICBO
-
-
-100
IEBO
-
-
-100
*VCE(sat)1
-
-
-1.5
*VBE(on)
-
-
-2.0
*hFE1
10
-
-
*hFE2
20
-
-
ft
125
-
-
REF.
A
B
C
D
E
F
Millimeter
Min.
Max.
4.4
4.6
4.05
4.25
1.50
1.70
1.30
1.50
2.40
2.60
0.89
1.20
REF.
G
H
I
J
K
L
M
Millimeter
Min. Max.
3.00 REF.
1.50 REF.
0.40 0.52
1.40 1.60
0.35 0.41
5q TYP.
0.70 REF.
Ratings
Unit
+150
ć
-55 ~ +150
ć
-30
V
-30
V
-10
V
-500
mA
1
W
Unit
V
V
V
nA
Na
V
V
K
K
MHz
Test Conditions
IC=-100uA, IE=0
IC=-100uA, IB=0
IE=-10uA, IC=0
VCB=-30V, IE=0
VEB=-10V, IC=0
IC=-100mA, IB=-0.1mA
IC=-100mA, VCE=-5V
VCE=-5V, IC=-10mA
VCE=-5V, IC=-100mA
VCE=-5V, IC=-10mA, f=100MHz
* Pulse Test: Pulse WidthЉ380 s, Duty CycleЉ2%
GMA64
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