GMA42M Datasheet, PDF (1/2 Pages) List of Unclassifed Manufacturers – NPN PLASTI-ENCAPSULATE TRANSISTOR

GMA42M
ISSUED DATE :2004/12/03
REVISED DATE :
NP N P L AS T I - E N CAP S U L AT E T R AN S I S T O R
Description
The GMA42M is designed for application requires for high voltage.
Package Dimensions
SOT-89
REF.
A
B
C
D
E
F
Millimeter
Min.
Max.
4.4
4.6
4.05
4.25
1.50
1.70
1.30
1.50
2.40
2.60
0.89
1.20
REF.
G
H
I
J
K
L
M
Millimeter
Min.
Max.
3.00 REF.
1.50 REF.
0.40
0.52
1.40
1.60
0.35
0.41
5q TYP.
0.70 REF.
Absolute Maximum Ratings at Ta = 25к
Parameter
Symbol
Junction Temperature
Tj
Storage Temperature
Tstg
Collector to Base Voltage
VCBO
Collector to Emitter Voltage
VCEO
Emitter to Base Voltage
VEBO
Collector Current
IC
Total Device Dissipation FR-5 Board(Note1)
Thermal Resistance, Junction to Ambient⁽¹⁾
PD
PD(Derate above 25к)
R _JA
Note 1: FR-5=1.0*0.75*0.062in
Characteristics at
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
VCE(sat)
VBE(sat)
hFE1
hFE2
hFE3
f_T
Min.
300
300
5
-
-
-
-
60
80
75
50
Ta = 25к
Typ.
-
-
-
-
-
-
-
-
-
-
-
Max.
-
-
-
250
100
200
900
-
250
-
-
Unit
V
V
V
nA
nA
mV
mV
MHZ
Ratings
+150
-55 ~ +150
300
300
5.0
500
500
4.0
250
Unit
ć
ć
V
V
V
mA
mW
mW /к
к/W
Test Conditions
IC=100uA
IC=1mA
IE=100uA
VCB=200V
VEB=5V
IC=20mA, IB=2mA
IC=20mA, IB=2mA
VCE=10V, IC=1mA
VCE=10V, IC=10mA
VCE=10V, IC=30mA
VCE=20V,IC=10mA,f=30MHZ
Classification Of hFE2
Rank
A
hFE
80-100
B1
100-150
B2
150-200
C
200-250
GMA42M
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