GMA14 Datasheet, PDF (1/2 Pages) GTM CORPORATION – NPN EPITAXIAL PLANAR TRANSISTOR

ISSUED DATE :2001/10/04
REVISED DATE :2006/05/10C
GMA14
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The GMA14 is a Darlington amplifier transistor designed for applications requiring extremely high current gain.
Package Dimensions
SOT-89
Absolute Maximum Ratings at Ta = 25к
Parameter
Symbol
Junction Temperature
Tj
Storage Temperature
Tstg
Collector to Base Voltage
VCBO
Collector to Emitter Voltage
VCEO
Emitter to Base Voltage
VEBO
Collector Current
IC
Total Power Dissipation
PD
REF.
A
B
C
D
E
F
Millimeter
Min.
Max.
4.4
4.6
4.05
4.25
1.50
1.70
1.30
1.50
2.40
2.60
0.89
1.20
REF.
G
H
I
J
K
L
M
Millimeter
Min.
Max.
3.00 REF.
1.50 REF.
0.40
0.52
1.40
1.60
0.35
0.41
5° TYP.
0.70 REF.
Ratings
Unit
+150
к
-55~+150
к
30
V
30
V
10
V
500
mA
1
W
Electrical Characteristics (Ta = 25к unless otherwise noted)
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
BVCBO
30
-
-
V
IC=100uA, IE=0
BVCEO
30
-
-
V
IC=100uA, IB=0
BVEBO
10
-
-
V
IE=10uA, IC=0
ICBO
-
-
100
nA
VCB=30V, IE=0
IEBO
-
-
100
nA
VEB=10V, IC=0
*VCE(sat)
-
-
1.5
V
IC=100mA, IB=0.1mA
*VBE(on)
-
-
2.0
V
VCE=5V, IC=100mA
*hFE1
10K
-
-
VCE=5V, IC=10mA
*hFE2
20K
-
-
VCE=5V, IC=100mA
fT
125
-
-
MHz VCE=5V, IC=10mA, f=100MHz
Cob
-
-
6
pF VCB=10V, IE=0, f=1MHz
* Pulse Test: Pulse WidthЉ380 s, Duty CycleЉ2%
GMA14
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