GMA06 Datasheet, PDF (1/2 Pages) GTM CORPORATION – NPN SILICON TRANSISTOR

GMA06
CORPORATION
NPN SILICON TRANSISTOR
Description
The GMA06 is Amplifier Transistor.
Package Dimension
ISSUED DATE :2004/05/28
REVISED DATE :
Absolute Maximum Ratings
Parameter
Junction Temperature
Storage Temperature
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation at Ta=25к
Symbol
Tj
Tstg
VCBO
VCEO
VEBO
IC
PD
Characteristics at
Symbol
Min.
BVCBO
80
BVCEO
80
BVEBO
4
ICBO
-
ICEO
-
*VCE(sat)
-
VBE(sat)
-
*hFE1
50
*hFE2
50
fT
100
Ta = 25к
Typ.
-
-
-
-
-
-
-
-
-
-
Max.
-
-
-
100
100
250
1.2
-
-
REF.
A
B
C
D
E
F
Millimeter
Min.
Max.
4.4
4.6
4.05
4.25
1.50
1.70
1.30
1.50
2.40
2.60
0.89
1.20
REF.
G
H
I
J
K
L
M
Millimeter
Min.
Max.
3.00 REF.
1.50 REF.
0.40
0.52
1.40
1.60
0.35
0.41
5q TYP.
0.70 REF.
Ratings
Unit
+150
ć
-55~+150
ć
80
V
80
V
4
V
500
mA
1.2
W
Unit
V
V
V
nA
nA
mV
V
MHz
IC=100uA
IC=1mA
Test Conditions
IE=100uA
VCB=80V
VCE=60V
IC=100mA, IB=10mA
IC=100mA, VCE=1V
VCE=1V, IC=10mA
VCE=1V, IC=100mA
VCE=2V, IC=10mA, f=100MHz
*Pulse Test:Pulse width 380us,Duty Cycle 2%
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