GM8050 Datasheet, PDF (1/2 Pages) GTM CORPORATION – NPN EPITAXIAL TRANSISTOR

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GM8050
NPN EPITAXIAL TRANSISTOR
Description
The GM8050 is designed for general purpose amplifier applications.
Package Dimensions
Millimeter
Millimeter
Min. Max.
Min. Max.
A
4.4
4.6 G
3.00 REF.
B 4.05 4.25 H
1.50 REF.
C 1.50 1.70 I
0.40 0.52
D 1.30 1.50 J
1.40 1.60
E 2.40 2.60 K
0.35 0.41
F 0.89 1.20 L
5q TYP.
M
0.70 REF.
Absolute Maximum Ratings at Ta = 25к
Parameter
Junction Temperature
Symbol
Tj
Storage Temperature
Tstg
Collector to Base Voltage
VCBO
Collector to Emitter Voltage
VCEO
Emitter to Base Voltage
VEBO
Collector Current
IC
IB Base Current
IB
Total Power Dissipation
PD
Characteristics at Ta = 25к
Symbol
Min.
Typ.
Max.
BVCBO
40
-
-
BVCEO
25
-
-
BVEBO
6
-
-
ICBO
-
-
100
IEBO
-
-
100
VCE(sat)
-
-
0.5
VBE(sat)
1.2
VBE(on)
-
-
1
Hfe1
45
-
-
Hfe2
120
-
500
Hfe3
40
-
-
fT
100
-
-
Classification Of hFE
Rank
hFE
C
120-200
D
160 - 300
Ratings
Unit
+150
ć
-55 ~ +150
ć
40
V
25
V
6
V
1.5
A
0.5
A
1
W
Unit
V
V
V
nA
nA
V
V
V
MHz
Test Conditions
IC=100uA
IC=2mA
IE=100uA
VCB=35V
VEB=6V
IC=0.8A, IB=80mA
IC=0.8A, IB=80mA
VCE=1V, IC=10mA
VCE=1V, IC=5mA
VCE=1V, IC=100mA
VCE=1V, IC=800mA
VCE=10V, IC=50mA
E
250 - 500