GM772 Datasheet, PDF (1/2 Pages) GTM CORPORATION – NPN EPITAXIAL PLANAR TRANSISTOR

CORPORATION ISSUED DATE :2002/04/16
REVISED DATE :2006/12/21B
GM772
PNP EPITAXIAL PLANAR TRANSISTOR
Description
The GM772 is designed for using in output stage of amplifier, voltage regulator DC-DC converter and driver.
Package Dimensions
SOT-89
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
4.4
4.6
4.05
4.25
1.50
1.70
1.30
1.50
2.40
2.60
0.89
1.20
REF.
G
H
I
J
K
L
M
Millimeter
Min. Max.
3.00 REF.
1.50 REF.
0.40 0.52
1.40 1.60
0.35 0.41
5° TYP.
0.70 REF.
Absolute Maximum Ratings at Ta = 25к
Parameter
Symbol
Ratings
Unit
Junction Temperature
Tj
+150
к
Storage Temperature
Tstg
-55~+150
к
Collector to Base Voltage
VCBO
-40
V
Collector to Emitter Voltage
VCEO
-30
V
Emitter to Base Voltage
VEBO
-5
V
Collector Current
IC
-3
A
Total Power Dissipation
PD
1.2
W
Electrical Characteristics (Ta = 25к, unless otherwise stated)
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
BVCBO
-40
-
-
V
IC=-100uA , IE=0
BVCEO
-30
-
-
V
IC=-10mA, IB=0
BVEBO
-5
-
-
V
IE=-10uA ,IC=0
ICBO
-
-
-1
uA VCB=-30V, IE=0
IEBO
-
-
-1
uA VEB=-3V, IC=0
*VCE(sat)
-
-0.3
-0.5
V
IC=-2A, IB=-0.2A
*VBE(sat)
-
-1
-2
V
IC=-2A, IB=-0.2A
*hFE1
30
-
-
VCE=-2V, IC=-20mA
*hFE2
100
-
500
VCE=-2V, IC=-1A
fT
-
80
-
MHz VCE=-20V, IC=-20mA, f=100MHz
Cob
-
55
-
pF VCB=-10V, IE=0, f=1MHz
*Measured under pulse condition. Pulse width=300 s, Duty CycleЉ2%
Classification Of hFE2
Rank
Q
Range
100 ~ 200
P
160 ~ 320
E
250 ~ 500
GM772
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