GM6718 Datasheet, PDF (1/3 Pages) GTM CORPORATION – NPN EPITAXIAL PLANAR TRANSISTOR

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GM6718
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The GM6718 is designed for general purpose medium power amplifier and switching.
Package Dimensions
Absolute Maximum Ratings at Ta = 25к
Parameter
Symbol
Junction Temperature
Tj
Storage Temperature
Tstg
Collector to Base Voltage
VCBO
Collector to Emitter Voltage
VCEO
Emitter to Base Voltage
VEBO
Collector Current
IC
Total Power Dissipation
PD
REF.
A
B
C
D
E
F
Millimeter
Min.
Max.
4.4
4.6
4.05
4.25
1.50
1.70
1.30
1.50
2.40
2.60
0.89
1.20
REF.
G
H
I
J
K
L
M
Millimeter
Min.
Max.
3.00 REF.
1.50 REF.
0.40
0.52
1.40
1.60
0.35
0.41
5q TYP.
0.70 REF.
Ratings
Unit
+150
ć
-55 ~ +150
ć
100
V
100
V
5
V
1
A
1
W
Characteristics at
Symbol
Min.
BVCBO
100
BVCEO
100
BVEBO
5
ICBO
-
*VCE(sat)
-
*hfe1
80
*hfe2
100
*hfe3
20
Cob
-
fT
50
Ta = 25к
Typ.
-
-
-
-
-
-
-
-
-
-
Max.
-
-
-
100
350
-
310
-
20
-
Unit
Test Conditions
V
IC=100uA , IE=0
V
IC=1mA. IB=0
V
IE=10uA, IC=0
nA
VCB=80V
mV
IC=350mA, IB=35mA
VCE=1V, IC=50mA
VCE=1V, IC=250mA
VCE=1V, IC=500mA
pF
VCB=10V, f=1MHz
MHz VCE=10V, IC=50mA, f=100MHz
*Pulse Test:Pulse width 380us,Duty Cycle 2%