GM5824 Datasheet, PDF (1/2 Pages) GTM CORPORATION – NPN SILICON EPITAXIAL PLANAR TRANSISTOR

CORPORATION ISSUED DATE :2006/03/10
REVISED DATE :
GM5824
NPN SILICON EPITAXIAL PLANAR T RANSISTOR
Description
The GM5824 is designed for high speed switching and low frequency amplifier applications.
Features
Ô¦60 Volt V_CEO
Ô¦3 Amp continuous current
Ô¦Low saturation voltage
Package Dimensions
SOT-89
REF.
A
B
C
D
E
F
Millimeter
Min.
Max.
4.4
4.6
4.05
4.25
1.50
1.70
1.30
1.50
2.40
2.60
0.89
1.20
REF.
G
H
I
J
K
L
M
Millimeter
Min.
Max.
3.00 REF.
1.50 REF.
0.40
0.52
1.40
1.60
0.35
0.41
5° TYP.
0.70 REF.
Absolute Maximum Ratings at Ta = 25к
Parameter
Symbol
Ratings
Unit
Junction Temperature
Tj
+150
к
Storage Temperature
Tstg
-55~+150
к
Collector to Base Voltage
VCBO
60
V
Collector to Emitter Voltage
VCEO
60
V
Emitter to Base Voltage
VEBO
6
V
Collector Current (DC)
IC
3
A
Collector Current (Pulse)
IC
6
A
Total Power Dissipation
PD
1.2
W
Electrical Characteristics (Ta = 25к, unless otherwise noted)
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
BVCBO
60
-
-
V
IC=100uA, IE=0
BVCEO
60
-
-
V
IC=1mA, IB=0
BVEBO
6
-
-
V
IE=100uA, IC=0
ICBO
-
-
1.0
uA VCB=40V, IE=0
IEBO
-
-
1.0
uA VEB=4V, IC=0
*VCE(sat)
-
-
500
mV IC=2A, IB=0.2A
*hFE
120
-
390
VCE=2V, IC=100mA
*fT
-
200
-
MHz VCE=10V, IE=-100mA, f=10MHz
Cob
-
20
-
pF VCB=10V, IE=0mA, f=1MHz
Ton (Turn-on time)
-
50
-
Tstg (Storage time)
-
150
-
ns
VCCЍ25V, IC=3A, IB1=300mA, IB2=-300mA
Tf (Fall time)
-
30
-
*Non repetitive pulse
Switching characteristics measurement circuit
Classification Of hFE
Rank
Q
Range
120 ~ 270
R
180 ~ 390
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