GM5551 Datasheet, PDF (1/2 Pages) GTM CORPORATION – NPN EPITAXIAL PLANAR TRANSISTOR

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GM5551
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The GM5551 is designed for for general purpose applications requiring high breakdown voltages.
Package Dimensions
Absolute Maximum Ratings
Parameter
Junction Temperature
Storage Temperature
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Symbol
Tj
Tstg
VCBO
VCES
VEBO
IC
PD
Characteristics at
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
VCE(sat)1
VCE(sat)2
VBE(sat)1
VBE(sat)2
hFE1
hFE2
hFE3
fT
Cob
Min.
180
160
6
-
-
-
-
-
-
80
80
30
100
-
Ta = 25к
Typ.
-
-
-
-
-
-
-
-
-
-
-
-
-
Max.
-
-
-
50
50
150
200
1
1
-
250
-
300
6
REF.
A
B
C
D
E
F
Millimeter
Min.
Max.
4.4
4.6
4.05
4.25
1.50
1.70
1.30
1.50
2.40
2.60
0.89
1.20
REF.
G
H
I
J
K
L
M
Millimeter
Min.
Max.
3.00 REF.
1.50 REF.
0.40
0.52
1.40
1.60
0.35
0.41
5q TYP.
0.70 REF.
Ratings
Unit
+150
ć
-55 ~ +150
ć
180
V
160
V
6.0
V
600
mA
1.2
W
Unit
V
V
V
nA
nA
mV
mV
V
V
MHz
pF
Test Conditions
IC=100uA
IC=1mA
IE=10uA
VCB=120V
VEB=4V
IC=10mA, IB=1mA
IC=50mA, IB=5mA
IC=10mA, IB=1mA
IC=50mA, IB=5mA
VCE=5V, IC=1mA
VCE=5V, IC=10mA
VCE=5V, IE=50mA
VCE=10V, IC=10mA, f=100MHz
VCB=10V, f=1MHz