GM4401 Datasheet, PDF (1/2 Pages) GTM CORPORATION – NPN EPITAXIAL PLANAR TRANSISTOR

CORPORATION ISSUED DATE :2004/12/17
REVISED DATE :
GM4401
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The GM4401 is designed for general purpose switching and amplifier applications.
Features
Ô¦Complementary to GM4403
ԦHigh Power Dissipation: 1W at 25ć
Ô¦High DC Current Gain: 100-300 at 150mA
Package Dimensions
SOT-89
Absolute Maximum Ratings at Ta = 25к
Parameter
Symbol
Junction Temperature
Tj
Storage Temperature
Collector to Base Voltage at Ta=25к
Collector to Emitter Voltage at Ta=25к
Emitter to Base Voltage at Ta=25к
Collector Current at Ta=25к
Total Power Dissipation at Ta=25к
Tstg
VCBO
VCEO
VEBO
IC
PD
Characteristics at Ta = 25к
REF.
A
B
C
D
E
F
Millimeter
Min.
Max.
4.4
4.6
4.05
4.25
1.50
1.70
1.30
1.50
2.40
2.60
0.89
1.20
REF.
G
H
I
J
K
L
M
Millimeter
Min. Max.
3.00 REF.
1.50 REF.
0.40 0.52
1.40 1.60
0.35 0.41
5q TYP.
0.70 REF.
Ratings
Unit
+150
ć
-55 ~ +150
ć
60
V
40
V
5
V
600
mA
1
W
Symbol
Min.
BVCBO
60
BVCEO
40
BVEBO
5
ICEX
-
*VCE(sat)1
-
*VCE(sat)2
-
*VBE(sat)1
750
*VBE(sat)2
-
*hFE1
20
*hFE2
40
*hFE3
80
*hFE4
100
*hFE5
40
fT
250
Cob
-
Classification Of hFE4
Rank
Range
Typ.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Max.
-
-
-
100
400
750
950
1.2
-
-
-
300
-
-
6.5
Unit
V
V
V
nA
mV
mV
mV
V
MHz
pF
A
100-210
B
190-300
Test Conditions
IC=100uA
IC=1mA
IE=10uA
VCE=35V, VBE= 0.4V
IC=150mA, IB=15mA
IC=500mA, IB=50mA
IC=150mA, IB=15mA
IC=500mA, IB=50mA
VCE=1V, IC=0.1mA
VCE=1V, IC=1mA
VCE=1V, IC=10mA
VCE=1V, IC=150mA
VCE=2V, IC=500mA
VCE=10V, IC=20mA, f=100MHz
VCB=5V, f=1MHz
* Pulse Test: Pulse WidthЉ380 s, Duty CycleЉ2%
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