GM4132 Datasheet, PDF (1/2 Pages) GTM CORPORATION – NPN EPITAXIAL PLANAR TRANSISTOR

CORPORATION ISSUED DATE :2006/02/06
REVISED DATE :
GM4132
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The GM4132 is designed for power amplifier applications.
Features
Ô¦High breakdown voltage (BV_CEO=120V)
Ô¦Low collector output capacitance (Typ. 20pF at V_CB=10V)
Ô¦High transition frequency (fT=80MHz)
Package Dimensions
SOT-89
REF.
A
B
C
D
E
F
Millimeter
Min.
Max.
4.4
4.6
4.05
4.25
1.50
1.70
1.30
1.50
2.40
2.60
0.89
1.20
REF.
G
H
I
J
K
L
M
Millimeter
Min.
Max.
3.00 REF.
1.50 REF.
0.40
0.52
1.40
1.60
0.35
0.41
5° TYP.
0.70 REF.
Absolute Maximum Ratings at Ta = 25к
Parameter
Symbol
Ratings
Unit
Junction Temperature
Tj
+150
к
Storage Temperature
Tstg
-55~+150
к
Collector to Base Voltage
VCBO
120
V
Collector to Emitter Voltage
VCEO
120
V
Emitter to Base Voltage
VEBO
5
V
Collector Current (DC)
IC
2
A
Collector Current (Pulse 10ms)
IC
3
A
Total Power Dissipation
PD
1.2
W
Electrical Characteristics (Ta = 25к, unless otherwise stated)
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
BVCBO
120
-
-
V
IC=50uA , IE=0
BVCEO
120
-
-
V
IC=1mA, IB=0
BVEBO
5
-
-
V
IE=50uA ,IC=0
ICBO
-
-
1
uA
VCB=100V, IE=0
IEBO
-
-
1
uA VEB=4V, IC=0
*VCE(sat)
-
-
400
mV IC=1A, IB=100mA
*hFE
82
-
390
VCE=5V, IC=100mA
fT
-
80
-
MHz VCE=5V, IE=-100mA, f=30MHz
Cob
-
20
-
pF VCB=10V, IE=0, f=1MHz
Classification Of hFE
Rank
P
Q
* Pulse Test: Pulse WidthЉ380 s, Duty CycleЉ2%
R
Range
82 ~ 180
120 ~ 270
180 ~ 390
GM4132
Page: 1/2