GM3904 Datasheet, PDF (1/2 Pages) GTM CORPORATION – NPN EPITAXIAL PLANAR TRANSISTOR

CORPORATION ISSUED DATE :2005/04/04
REVISED DATE :
GM3904
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The GM3904 is designed for general purpose switching and amplifier applications.
Features
Ô¦Collector-Emitter Voltage: VCEO=40V
Ô¦Complementary to GM3906
Package Dimensions
SOT-89
REF.
A
B
C
D
E
F
Millimeter
Min.
Max.
4.4
4.6
4.05
4.25
1.50
1.70
1.30
1.50
2.40
2.60
0.89
1.20
Absolute Maximum Ratings (Ta = 25к,unless otherwise specified)
Parameter
Symbol
Ratings
Collector to Base Voltage
VCBO
60
Collector to Emitter Voltage
VCEO
40
Emitter to Base Voltage
VEBO
6
Collect Current(DC)
IC
200
Junction Temperature
Tj
+150
Storage Temperature Range
TsTG
-55 ~ +150
Total Power Dissipation
PD
1
REF.
G
H
I
J
K
L
M
Millimeter
Min. Max.
3.00 REF.
1.50 REF.
0.40 0.52
1.40 1.60
0.35 0.41
5q TYP.
0.70 REF.
Unit
V
V
V
mA
ć
ć
W
Electrical Characteristics(Ta = 25к,unless otherwise specified)
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
BVCBO
60
-
-
V
IC=10uA, IE=0
BVCEO
40
-
-
V
IC=1mA, IB=0
BVEBO
6
-
-
V
IE=10uA, IC=0
ICEX
-
-
50
nA
VCE=30V, VBE=3V
*VCE(sat)1
-
-
200
mV
IC=10mA, IB=1mA
*VCE(sat)2
-
-
300
mV
IC=50mA, IB=5mA
*VBE(sat)1
650
-
850
mV
IC=10mA, IB=1mA
*VBE(sat)2
-
-
950
mV
IC=50mA, IB=5mA
*hFE1
40
-
-
VCE=1V, IC=0.1mA
*hFE2
70
-
-
VCE=1V, IC=1mA
*hFE3
100
-
300
VCE=1V, IC=10mA
*hFE4
60
-
-
VCE=1V, IC=50mA
*hFE5
30
-
-
-
VCE=1V, IC=100mA
fT
300
MHZ
VCE=20V, IC=10mA, f=100MHz
Cob
-
-
4
pF
VCB=5V, IE=0, f=1MHz
* Pulse Test: Pulse WidthЉ380 s, Duty CycleЉ2%
GM3904
Page: 1/2