GM3669 Datasheet, PDF (1/2 Pages) GTM CORPORATION – NPN EPITAXIAL PLANAR TRANSISTOR

ISSUED DATE :2005/03/25
REVISED DATE :2005/11/28B
GM3669
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The GM3669 is designed for using in power amplifier applications, power switching application.
Package Dimensions
SOT-89
Absolute Maximum Ratings at TA = 25к
Parameter
Symbol
Junction Temperature
Tj
Storage Temperature Range
TsTG
Collector to Base Voltage
VCBO
Collector to Emitter Voltage
VCEO
Emitter to Base Voltage
VEBO
Collect Current(DC)
IC
Total Power Dissipation
PD
Electrical Characteristics (TA = 25к)
Symbol
Min.
Typ.
Max.
BVCBO
80
-
-
BVCEO
80
-
-
BVEBO
5
-
-
ICBO
-
-
1
IEBO
-
-
1
*VCE(sat)
-
0.15
0.5
*VBE(sat)
-
0.9
1.2
*hFE1
70
-
240
*hFE2
40
-
-
fT
-
100
-
Cob
-
30
-
Ton
-
0.2
-
Tstg
-
1
-
Tf
-
0.2
-
Classification Of hFE1
Rank
O
Range
70 ~ 140
Y
120 ~ 240
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
4.4
4.6
4.05
4.25
1.50
1.70
1.30
1.50
2.40
2.60
0.89
1.20
REF.
G
H
I
J
K
L
M
Millimeter
Min. Max.
3.00 REF.
1.50 REF.
0.40 0.52
1.40 1.60
0.35 0.41
5° TYP.
0.70 REF.
Ratings
Unit
+150
к
-55 ~ +150
к
80
V
80
V
5
V
2
A
1
W
Unit
V
V
V
uA
uA
V
V
MHz
pF
uS
Test Conditions
IC=100uA, IE=0
IC=100uA, IB=0
IE=100uA, IC=0
VCB=80V, IE=0
VBE=5V, IC=0
IC=1A, IB=50mA
IC=1A, IB=50mA
VCE=2V, IC=0.5A
VCE=2V, IC=1.5A
VCE=2V, IC=0.5A
VCB=10V, f=1MHz
VCC=30V, RL=30 ,
IC=1A,
IB1=-IB2=50mA,
Duty CycleЉ1%
* Pulse Test: Pulse WidthЉ380 s, Duty CycleЉ2%
GM3669
1/2