GM3055 Datasheet, PDF (1/6 Pages) GTM CORPORATION – N-CHANNEL ENHANCEMENT MODE POWER MOSFET

1/6
GM3055 N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Description
The SOT-89 package is universally preferred for all commercial industrial surface mount applications and
suited for low voltage applications such as DC/DC converters.
Package Dimensions
SOT-89
Absolute Maximum Ratings at Ta = 25к
Parameter
Symbol
Operating Junction Temperature Range
Tj
Storage Temperature Range
Tstg
Drain - Source Voltage
VDS
Gate - Source Voltage
VGS
Continuous Drain Current ,VGS@10V
ID@TC=25ć
Continuous Drain Current ,VGS@10V
Pulsed Drain Current¹
ID@TC=100ć
IDM
Total Power Dissipation
PD@TC=25ć
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
4.4
4.6
4.05
4.25
1.50
1.70
1.30
1.50
2.40
2.60
0.89
1.20
REF.
G
H
I
J
K
L
M
Millimeter
Min. Max.
3.00 REF.
1.50 REF.
0.40 0.52
1.40 1.60
0.35 0.41
5q TYP.
0.70 REF.
Ratings
Unit
-55 ~+150
ć
-55 ~ +150
ć
30
V
±20
V
15
A
9
A
50
A
15
W
Thermal Data
Symbol
Rthj-case
Rthj-amb
parameter
Thermal Resistance junction-case
Thermal Resistance junction-ambient
Max.
Max.
Value
3
42
Unit
ć/W
ć/W
Source –Drain Diode
Symbol
Parameter
Is
Continuous source Current (Body Diode)
ISM
Pulsed Source Current(Body Diode)¹
VsD
Forward On Voltage²
Test Conditions
VD=VG=0V, VS=1.3V
Tj=25ć,Is=15A,VGS=0V
Min. Typ. Max. Units
-
-
15
A
-
-
50
A
-
-
1.3
V