GM2501 Datasheet, PDF (1/4 Pages) GTM CORPORATION – P-CHANNEL ENHANCEMENT MODE POWER MOSFET

Pb Free Plating Product
ISSUED DATE :2005/12/16
REVISED DATE :
GM2501
P-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS
RDS(ON)
ID
-20V
200m
-2.6A
Description
The GM2501 provide the designer with the best combination of fast switching, low on-resistance and
cost-effectiveness.
The SOT-89 package is universally preferred for all commercial-industrial surface mount applications and
suited for low voltage and battery power applications.
Features
*Simple Drive Requirement
*Surface Mount Device
Package Dimensions
SOT-89
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
4.4
4.6
4.05
4.25
1.50
1.70
1.30
1.50
2.40
2.60
0.89
1.20
REF.
G
H
I
J
K
L
M
Millimeter
Min. Max.
3.00 REF.
1.50 REF.
0.40 0.52
1.40 1.60
0.35 0.41
5° TYP.
0.70 REF.
Absolute Maximum Ratings
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
Continuous Drain Current³
Continuous Drain Current³
Pulsed Drain Current^1,2
Total Power Dissipation
V_GS
I_D @TA=25к
I_D @TA=70к
I_DM
P_D @TA=25к
Linear Derating Factor
Operating Junction and Storage Temperature Range Tj, Tstg
Ratings
-20
±12
-2.6
-2.1
-10
1.5
0.012
-55 ~ +150
Unit
V
V
A
A
A
W
W/к
к
Thermal Data
Parameter
Thermal Resistance Junction-ambient
Max.
Symbol
Rthj-a
Value
83.3
Unit
к/W
GM2501
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