GM2222A Datasheet, PDF (1/2 Pages) GTM CORPORATION – NPN EPITAXIAL PLANAR TRANSISTOR

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GM2222A
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The GM2222A is designed for general purpose amplifier and high speed, medium-power switching applications.
Package Dimensions
Absolute Maximum Ratings at Ta = 25к
Parameter
Junction Temperature
Symbol
Tj
Storage Temperature
Tstg
Collector to Base Voltage
VCBO
Collector to Emitter Voltage
VCEO
Emitter to Base Voltage
VEBO
Collector Current
IC
Total Power Dissipation
PD
REF.
A
B
C
D
E
F
Millimeter
Min.
Max.
4.4
4.6
4.05
4.25
1.50
1.70
1.30
1.50
2.40
2.60
0.89
1.20
REF.
G
H
I
J
K
L
M
Millimeter
Min.
Max.
3.00 REF.
1.50 REF.
0.40
0.52
1.40
1.60
0.35
0.41
5q TYP.
0.70 REF.
Ratings
Unit
+150
ć
-55 ~ +150
ć
75
V
40
V
6.0
V
600
mA
1.2
W
Characteristics at
Symbol
BVCBO
BVCEO
BVEBO
ICBO
ICEX
IEBO
VCE(sat)1
VCE(sat)2
VBE(sat)1
VBE(sat)2
hFE1
hFE2
hFE3
hFE4
hFE5
hFE6
fT
Min.
75
40
6
-
-
-
-
-
-
-
35
50
75
100
40
50
300
Ta = 25ć
Typ.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Max.
-
-
-
10
10
50
300
1
1.2
2
-
-
-
300
-
-
-
Unit
V
V
V
nA
nA
nA
mV
V
V
V
MHz
Test Conditions
IC=10uA
IC=10mA
IE=10uA
VCB=60V
VCB=60V,VEB(off)=3V
VEB=3V
IC=150mA, IB=15mA
IC=500mA, IB=50mA
IC=150mA, IB=15mA
IC=500mA, IB=50mA
VCE=10V, IC=100uA
VCE=10V, IC=1mA
VCE=10V, IC=10mA
VCE=10V, IC=150mA
VCE=10V, IC=500mA
VCE=1V, IC=150mA
VCE=20V, IC=20mA, f=100MHz