GM195 Datasheet, PDF (1/2 Pages) GTM CORPORATION – PNP SILICON PLANAR MEDIUM POWER TRANSISTOR

CORPORATION ISSUED DATE :2005/10/06
REVISED DATE :
GM195
PNP SILICON PLANAR MEDIUM POWER TRANSISTOR
Description
The GM195 is designed for medium power amplifier applications.
Features
Ô¦-60 Volt V_CEO
Ô¦1 Amp continuous current
Ô¦Complementary to GM194
Package Dimensions
SOT-89
REF.
A
B
C
D
E
F
Millimeter
Min.
Max.
4.4
4.6
4.05
4.25
1.50
1.70
1.30
1.50
2.40
2.60
0.89
1.20
REF.
G
H
I
J
K
L
M
Millimeter
Min. Max.
3.00 REF.
1.50 REF.
0.40 0.52
1.40 1.60
0.35 0.41
5q TYP.
0.70 REF.
Absolute Maximum Ratings at Ta = 25к
Parameter
Symbol
Junction Temperature
Tj
Storage Temperature
Tstg
Collector to Base Voltage
VCBO
Collector to Emitter Voltage
VCEO
Emitter to Base Voltage
VEBO
Collector Current (DC)
IC
Collector Current (Pulse)
IC
Base Current
IB
Total Power Dissipation
PD
Ratings
+150
-55~+150
-80
-60
-5
-1
-2
-200
1
Unit
к
к
V
V
V
A
A
mA
W
Electrical Characteristics (Ta = 25к, unless otherwise stated)
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
BVCBO
-80
-
-
V
IC=-100uA , IE=0
*BVCEO
-60
-
-
V
IC=-10mA, IB=0
BVEBO
-5
-
-
V
IE=-100uA ,IC=0
ICBO
-
-
-100
nA
VCB=-60V, IE=0
ICES
-
-
-100
nA
VCES=-60V
IEBO
-
-
-100
nA
VEB=-4V, IC=0
*VCE(sat)1
-
-
-0.3
V
IC=-500mA, IB=-50mA
*VCE(sat)2
-
-
-0.6
V
IC=-1A, IB=-100mA
*VBE(sat)
-
-
-1.2
V
IC=-1A, IB=-100mA
*VBE(on)
-
-
-1.0
V
VCE=-5V, IC=-1A
*hFE1
100
-
VCE=-5V, IC=-1mA
*hFE2
100
-
300
VCE=-5V, IC=-500mA
*hFE3
80
-
VCE=-5V, IC=-1A
*hFE4
15
-
VCE=-5V, IC=-2A
fT
150
-
-
MHz VCE=-10V, IC=-50mA, f=100MHz
Cob
-
-
10
pF
VCB=-10V, IE=0, f=1MHz
*Measured under pulse condition. Pulse width=300 s, Duty CycleЉ2%
GM195
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