GM162 Datasheet, PDF (1/4 Pages) GTM CORPORATION – P-CHANNEL ENHANCEMENT MODE POWER MOSFET

CORPORATION ISSUED DATE :2004/11/01
REVISED DATE :
GM162
P-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS -30V
RDS(ON) 80m
ID
-3.2A
Description
The GM162 provides the designer with the best combination of fast switching, low on-resistance and
cost-effectiveness.
Features
Ô¦Lower on-resistance
Ô¦Ultra high-speed switching
Applications
Ô¦Notebook PCs
Ô¦Cellular and portable phones
Ô¦On-board power supplies
Ô¦Li-ion battery Systems
Package Dimensions
SOT-89
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current³
Continuous Drain Current³
Pulsed Drain Current^1,2
Power Dissipation
Operating Junction and Storage Temperature Range
Linear Derating Factor
Thermal Data
Parameter
Thermal Resistance Junction-ambient³
Max.
Symbol
VDS
VGS
ID @Ta=25к
ID @Ta=70к
IDM
PD@Ta=25к
Tj, Tstg
Symbol
Rthj-amb
REF.
A
B
C
D
E
F
Millimeter
Min.
Max.
4.4
4.6
4.05
4.25
1.50
1.70
1.30
1.50
2.40
2.60
0.89
1.20
REF.
G
H
I
J
K
L
M
Millimeter
Min.
Max.
3.00 REF.
1.50 REF.
0.40
0.52
1.40
1.60
0.35
0.41
5q TYP.
0.70 REF.
Ratings
-30
f12
-3.2
-2.6
-10
2
-55 ~ +150
0.01
Ratings
90
Unit
V
V
A
A
A
W
ć
W/ć
Unit
ć/W
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