GM1426 Datasheet, PDF (1/2 Pages) GTM CORPORATION – PNP EPITAXIAL PLANAR TRANSISTOR

CORPORATION ISSUED DATE :2006/03/14
REVISED DATE :
GM1426
PNP EPITAXIAL PLANAR TRANSISTOR
Description
The GM1426 is designed for DC-DC converter.
Features
Ô¦hFE=160~390 (@VCE=-2V, IC=-100mA)
Ô¦Low Saturation Voltage VCE(sat)=-0.5 (Max.) (@IC=-2A, IB=-100mA)
Package Dimensions
SOT-89
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
4.4
4.6
4.05
4.25
1.50
1.70
1.30
1.50
2.40
2.60
0.89
1.20
REF.
G
H
I
J
K
L
M
Millimeter
Min. Max.
3.00 REF.
1.50 REF.
0.40 0.52
1.40 1.60
0.35 0.41
5° TYP.
0.70 REF.
Absolute Maximum Ratings at Ta = 25к
Parameter
Symbol
Ratings
Unit
Junction Temperature
Tj
+150
к
Storage Temperature
Tstg
-55~+150
к
Collector to Base Voltage
VCBO
-20
V
Collector to Emitter Voltage
VCEO
-20
V
Emitter to Base Voltage
VEBO
-6
V
Collector Current (DC)
IC
-3
A
Total Power Dissipation
PD
1.2
W
Electrical Characteristics (Ta = 25к, unless otherwise stated)
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
BVCBO
-20
-
-
V
IC=-50uA , IE=0
BVCEO
-20
-
-
V
IC=-1mA, IB=0
BVEBO
-6
-
-
V
IE=-10uA ,IC=0
ICBO
-
-
-100
nA
VCB=-20V, IE=0
ICES
-
-
-100
nA
VCES=-20V
IEBO
-
-
-100
nA
VEB=-5V, IC=0
*VCE(sat)
-
-0.3
-0.5
V
IC=-2A, IB=-100mA
*hFE
160
260
390
VCE=-2V, IC=-100mA
fT
-
240
-
MHz VCE=-2V, IC=-0.5A, f=100MHz
Cob
-
35
-
pF VCB=-10V, IE=0, f=1MHz
* Pulse Test: Pulse WidthЉ380 s, Duty CycleЉ2%
GM1426
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