GM1300 Datasheet, PDF (1/2 Pages) GTM CORPORATION – PNP SILICON EPITAXIAL TRANSISTOR

CORPORATION ISSUED DATE :2006/03/14
REVISED DATE :
GM1300
PNP SILICON EPITAXIAL TRANSISTOR
Description
The GM1300 is designed for medium power amplifier applications.
Features
Ô¦hFE(1)=140~1000 (@VCE=-1V, IC=-0.5A)
Ô¦hFE(2)=60 (Min.) (@VCE=-1V, IC=-2A)
Ô¦Low Saturation Voltage VCE(sat)=-0.5 (Max.) (@IC=-2A, IB=-50mA)
Package Dimensions
SOT-89
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
4.4
4.6
4.05
4.25
1.50
1.70
1.30
1.50
2.40
2.60
0.89
1.20
REF.
G
H
I
J
K
L
M
Millimeter
Min. Max.
3.00 REF.
1.50 REF.
0.40 0.52
1.40 1.60
0.35 0.41
5° TYP.
0.70 REF.
Absolute Maximum Ratings at Ta = 25к
Parameter
Symbol
Ratings
Unit
Junction Temperature
Tj
+150
к
Storage Temperature
Tstg
-55~+150
к
Collector to Base Voltage
VCBO
-20
V
Collector to Emitter Voltage
VCEO
-10
V
Emitter to Base Voltage
VEBO
-6
V
Collector Current (DC)
IC
-2
A
Collector Current (Pulse)
IC
-5
A
Base Current
IB
-200
mA
Total Power Dissipation
PD
1
W
Electrical Characteristics (Ta = 25к, unless otherwise stated)
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
BVCBO
-20
-
-
V
IC=-100uA , IE=0
BVCEO
-10
-
-
V
IC=-10mA, IB=0
BVEBO
-6
-
-
V
IE=-1mA ,IC=0
ICBO
-
-
-100
nA
VCB=-20V, IE=0
ICES
-
-
-100
nA
VCES=-20V
IEBO
-
-
-100
nA
VEB=-6V, IC=0
*VCE(sat)
-
-0.3
-0.5
V
IC=-2A, IB=-50mA
*VBE(on)
-
-0.83
-1.5
V
VCE=-1V, IC=-2A
*hFE1
140
-
1000
VCE=-1V, IC=-0.5A
*hFE2
60
-
-
VCE=-1V, IC=-2A
fT
-
140
-
MHz VCE=-1V, IC=-0.5A, f=100MHz
Cob
-
50
-
pF VCB=-10V, IE=0, f=1MHz
Classification Of hFE1
* Pulse Test: Pulse WidthЉ380 s, Duty CycleЉ2%
Rank
Y
GR
BL
PE
Range
140 ~ 280
200 ~ 400
300 ~ 600
500 ~ 1000
GM1300
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