GLA94 Datasheet, PDF (1/2 Pages) GTM CORPORATION – PNP EPITAXIAL PLANAR TRANSISTOR

ISSUED DATE :2005/03/25
REVISED DATE :
GLA94
PNP EPITAXIAL PLANAR TRANSISTOR
Description
The GLA94 is designed for application requires high voltage.
Features
Ô¦High voltage: VCEO=400V (min) at IC=1mA
ԦHigh current gain: IC=300mA at 25ć
Ô¦Complementary with GLA44
Package Dimensions
SOT-223
REF.
A
C
D
E
I
H
Millimeter
Min. Max.
6.70 7.30
2.90 3.10
0.02 0.10
0̓
10̓
0.60 0.80
0.25 0.35
REF.
B
J
1
2
3
4
5
Millimeter
Min. Max.
13̓TYP.
2.30 REF.
6.30 6.70
6.30 6.70
3.30 3.70
3.30 3.70
1.40 1.80
Absolute Maximum Ratings at Ta = 25к
Parameter
Symbol
Ratings
Unit
Junction Temperature
Tj
+150
ć
Storage Temperature Range
TsTG
-55 ~ +150
ć
Collector to Base Voltage
VCBO
-400
V
Collector to Emitter Voltage
VCEO
-400
V
Emitter to Base Voltage
VEBO
-6
V
Collect Current(DC)
IC
-500
mA
Total Power Dissipation
PD
2
W
Electrical Characteristics(Ta = 25к)
Symbol
Min.
Typ.
Max.
BVCBO
-400
-
-
BVCEO
-400
-
-
BVEBO
-6
-
-
ICBO
-
-
-100
ICES
-
-
-500
IEBO
-
-
-100
*VCE(sat)1
-
-
-350
*VCE(sat)2
-
-
-500
*VCE(sat)3
-
-
-750
*VBE(sat)
-
-
-750
*hFE1
40
-
-
*hFE2
50
-
300
*hFE3
45
-
-
*hFE4
40
-
-
Unit
Test Conditions
V
IC=-100Ua, IE=0
V
IC=-1mA, IB=0
V
IE=-100uA, IC=0
nA
VCB=-400V, IE=0
nA
VCE=-400V, VBE=0
nA
VEB=-6V, IC=0
mV
IC=-1mA, IB=-0.1mA
mV
IC=-10mA, IB=-1mA
mV
IC=-50mA, IB=-5mA
mV
IC=-10mA, IB=-1mA
VCE=-10V, IC=-1mA
VCE=-10V, IC=-10mA
VCE=-10V, IC=-50mA
VCE=-10V, IC=-100mA
* Pulse Test: Pulse WidthЉ380 s, Duty CycleЉ2%
GMA94
1/2