GLA42 Datasheet, PDF (1/1 Pages) GTM CORPORATION – NPN EPITAXIAL PLANAR TRANSISTOR

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GLA42
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The GLA42 is designed for application as a video output to drive color CRT, or as dialer circuit in electronics telephone.
Package Dimensions
Absolute Maximum Ratings at Ta = 25к
Parameter
Junction Temperature
Symbol
Tj
Storage Temperature
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Tstg
VCBO
VCEO
VEBO
IC
Total Power Dissipation
PD
REF.
A
C
D
E
I
H
Millimeter
Min.
Max.
6.70
7.30
2.90
3.10
0.02
0.10
0̓
10̓
0.60
0.80
0.25
0.35
REF.
B
J
1
2
3
4
5
Millimeter
Min.
Max.
13̓TYP.
2.30 REF.
6.30
6.70
6.30
6.70
3.30
3.70
3.30
3.70
1.40
1.80
Ratings
Unit
+150
ć
-55~+150
ć
300
V
300
V
6
V
500
mA
2
W
Characteristics at
Symbol
BVCBO
BVCEO
Min.
300
300
BVEBO
6
ICBO
-
IEBO
-
VCE(sat)
-
VBE(sat)
-
hFE1
25
hFE2
40
hFE3
40
fT
50
Cob
-
Ta = 25к
Typ.
-
-
-
-
-
-
-
-
-
-
-
-
Max.
-
-
-
100
100
500
900
-
-
-
-
3
Unit
V
V
V
nA
nA
mV
mV
MHz
pF
Test Conditions
IC=100uA
IC=1mA
IE=10uA
VCB=300V
VEB=6V
IC=20mA, IB=2mA
IC=20mA, IB=2mA
VCE=10V, IC=1mA
VCE=10V, IC=10mA
VCE=10V, IC=30mA
VCE=20V, IC=10mA, f=100MHz
VCB=20V, f=1MHz
Important Notice:
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM.
GTM reserves the right to make changes to its products without notice.
GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems.
GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C.
TEL : [phone] FAX : [phone]
China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China
TEL : [phone] FAX : [phone]